Details

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BUY 2SC3856 https://www.utsource.net/itm/p/12603799.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 0.5 mA	-	-	60	V
Emitter-Base Voltage	VEBO	IE = 5 mA	-	-	5	V
Collector Current	IC	VC = 30 V	-	100	200	mA
Base Current	IB	VC = 30 V, IC = 100 mA	-	1	5	mA
DC Current Gain	hFE	IC = 15 mA	80	250	450	-
Transition Frequency	fT	IC = 15 mA	-	250	350	MHz
Storage Temperature	Tstg	-	-55	-	150	掳C
Operating Temperature	Topr	-	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • The 2SC3856 is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection.

2. Mounting:

   • Ensure that the transistor is mounted on a suitable heatsink if operating at high currents or power levels.
   • Follow manufacturer guidelines for mounting torque and methods.

3. Biasing:

   • For optimal performance, bias the base current according to the required collector current using the hFE values provided in the table.

4. Operating Limits:

   • Do not exceed the maximum ratings specified in the table as this can lead to device failure.

5. Storage and Operation Temperature:

   • Store and operate the device within the temperature ranges specified to avoid damage or unreliable operation.

6. Testing:

   • When testing the device, ensure all test conditions match those listed in the parameter table to get accurate results.

7. Application Circuits:

   • Refer to application notes and typical circuit diagrams provided by the manufacturer for guidance on integrating the 2SC3856 into your design.

(For reference only)