LTC4412HVIS6#TRPBF

LTC4412HVIS6#TRPBF


Specifications
SKU
12603800
Details

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Parameter Symbol Min Typical Max Unit Description
Input Voltage VIN 3.5 - 40 V Operating input voltage range
Output Voltage VOUT 3.5 - 40 V Controlled output voltage
Reverse Current IREV - 0.1 1 渭A Reverse leakage current
Control Threshold VCTRL 0.7 0.9 1.1 V Control threshold for ideal diode operation
Gate Drive Voltage VGS 4.5 - 20 V Gate drive voltage for external MOSFET
Quiescent Current IQ - 30 50 渭A Supply current in active state
Shutdown Current ISD - 0.1 1 渭A Supply current in shutdown mode
Thermal Shutdown TSD 160 - - 掳C Temperature at which thermal shutdown occurs
Operating Temperature TOPR -40 - 125 掳C Operating temperature range
Storage Temperature TSTG -65 - 150 掳C Storage temperature range

Instructions for Use

  1. Circuit Configuration:

    • Connect the VIN pin to the input power supply.
    • Connect the VOUT pin to the load or next stage of the circuit.
    • Connect the GATE pin to the gate of the external MOSFET.
    • Connect the SOURCE pin to the source of the external MOSFET.
    • Connect the CTRL pin to a control signal if using the device in controlled mode.
  2. External Components:

    • Use an external N-channel MOSFET with appropriate ratings for the application.
    • Ensure the MOSFET has a low Rds(on) to minimize power loss.
  3. Thermal Management:

    • Place the device on a PCB with adequate copper area for heat dissipation.
    • Consider adding a heatsink if operating at high power levels.
  4. Power-Up Sequence:

    • Ensure the input voltage is within the specified range before applying power.
    • Allow the device to stabilize before connecting the load.
  5. Shutdown Mode:

    • To enter shutdown mode, pull the EN pin low.
    • The device will draw minimal current in this state.
  6. Reverse Current Protection:

    • The device automatically blocks reverse current flow when the input voltage is lower than the output voltage.
  7. Thermal Shutdown:

    • The device will shut down if the junction temperature exceeds 160掳C to prevent damage.
    • Allow the device to cool down before reapplying power.
  8. Storage and Handling:

    • Store the device in a dry environment within the specified storage temperature range.
    • Handle with care to avoid static discharge and mechanical damage.

For detailed schematics and further information, refer to the datasheet provided by Linear Technology (now part of Analog Devices).

(For reference only)

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