Details

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BUY M27256-2F1 https://www.utsource.net/itm/p/12603916.html

Parameter	Description	Value
Part Number	Full part number	M27256-2F1
Type	Memory Type	EPROM (Erasable Programmable Read-Only Memory)
Organization	Organization	32K x 8
Density	Memory Density	256 Kbits
Vcc Operating Range	Supply Voltage Range	4.5V to 5.5V
Vpp Programming Voltage	Programming Voltage (Pin 24)	12.5V 卤 0.5V
Access Time	Access Time (Typical)	150 ns
Data Retention	Data Retention	10 years
Operating Temperature	Operating Temperature Range	-40掳C to +85掳C
Package	Package Type	28-Pin Ceramic DIP
Programming Cycle	Programming Cycle Time	5 ms (Typical)
Write Current	Write Current (Max)	150 mA
Read Current	Read Current (Max)	20 mA
Standby Current	Standby Current (Max)	50 渭A
Programming Method	Programming Method	Byte/Word Programming
Erase Method	Erase Method	UV Erase (253.7 nm)
Erase Time	UV Erase Time	15 minutes (Typical)
Pins	Pin Count	28

Instructions for Use

1. Power Supply:

   • Connect Vcc (Pin 28) to +5V.
   • Connect Vss (Pin 14) to GND.
   • Connect Vpp (Pin 24) to +12.5V during programming.

2. Addressing:

   • Connect address lines A0-A14 to the desired memory location.
   • A0 is the least significant bit, and A14 is the most significant bit.

3. Data Input/Output:

   • Connect data lines D0-D7 to the data bus.
   • D0 is the least significant bit, and D7 is the most significant bit.

4. Control Signals:

   • Connect /OE (Output Enable, Pin 27) to GND to enable data output.
   • Connect /CE (Chip Enable, Pin 26) to GND to select the chip.
   • Connect /WE (Write Enable, Pin 25) to GND to initiate a write operation (only during programming).

5. Programming:

   • Apply Vpp (12.5V) to Pin 24.
   • Set /CE and /OE to GND.
   • Set /WE to GND to write data.
   • Apply the desired data on the D0-D7 lines.
   • Hold /WE low for the required programming time (typically 5 ms).
   • Return /WE to high after programming.

6. Reading:

   • Apply Vcc (5V) to Pin 28.
   • Set /CE and /OE to GND.
   • Apply the desired address on the A0-A14 lines.
   • Data will be available on the D0-D7 lines after the access time (150 ns).

7. Erase:

   • Expose the EPROM to UV light (253.7 nm) for approximately 15 minutes to erase the contents.
   • Ensure the EPROM is not exposed to excessive UV light to avoid damage.

8. Storage:

   • Store the EPROM in a dark, dry place to prevent accidental erasure by UV light.
   • Use a label or cap to protect the window from light when not in use.

(For reference only)