Details

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BUY SKIIP22NAB126V10 https://www.utsource.net/itm/p/12603997.html

Parameter	Description	Value	Unit
Part Number	Component Identifier	SKIIP22NAB126V10	-
Type	Device Type	IGBT Module	-
Package	Housing Type	62mm x 140mm	mm
Collector-Emitter Voltage (Vce) Rating	Maximum Collector-Emitter Voltage	1200	V
Collector Current (Ic) Rating	Continuous Collector Current at Tc = 25掳C	1200	A
Collector Current (Ic) Rating	Continuous Collector Current at Tc = 100掳C	900	A
Emitter-Base Voltage (Veb) Rating	Maximum Emitter-Base Voltage	15	V
Gate-Emitter Voltage (Vge) Rating	Maximum Gate-Emitter Voltage	卤20	V
Power Dissipation (Ptot) Rating	Total Power Dissipation at Tc = 25掳C	14400	W
Power Dissipation (Ptot) Rating	Total Power Dissipation at Tc = 100掳C	10800	W
Thermal Resistance (Rth(j-c))	Junction to Case Thermal Resistance	0.05	K/W
Operating Temperature Range (Tj)	Junction Temperature Range	-40 to 150	掳C
Storage Temperature Range (Tstg)	Storage Temperature Range	-55 to 150	掳C
Short-Circuit Withstand Time	Maximum Short-Circuit Withstand Time at Tc = 25掳C	10	渭s
Short-Circuit Withstand Time	Maximum Short-Circuit Withstand Time at Tc = 100掳C	7	渭s
Insulation Resistance (Ri)	Minimum Insulation Resistance	1000	M惟
Leakage Current (Iceo)	Collector-Emitter Leakage Current at Vce = 1200V, Tj = 150掳C	10	mA
Turn-On Time (ton)	Turn-On Time	1.5	渭s
Turn-Off Time (toff)	Turn-Off Time	1.8	渭s

Instructions for Use:

1. Mounting and Assembly:

   • Ensure that the module is mounted on a suitable heatsink with adequate thermal paste to ensure proper heat dissipation.
   • Tighten the mounting screws to the recommended torque values to avoid mechanical stress.

2. Electrical Connections:

   • Connect the collector, emitter, and gate terminals correctly to the power supply and control circuit.
   • Use short, low-inductance leads to minimize parasitic inductance effects.

3. Thermal Management:

   • Monitor the junction temperature (Tj) to ensure it does not exceed the maximum operating temperature of 150掳C.
   • Use forced air cooling or liquid cooling if necessary to maintain optimal temperatures.

4. Gate Drive:

   • Apply a gate-emitter voltage (Vge) within the specified range of 卤20V.
   • Ensure the gate drive circuit has sufficient current capability to charge and discharge the gate capacitance quickly.

5. Protection:

   • Implement overcurrent protection to prevent damage from short circuits.
   • Use snubber circuits to suppress voltage transients and ringing.

6. Storage:

   • Store the module in a dry, cool environment to prevent moisture and corrosion.
   • Handle the module with care to avoid mechanical damage.

7. Testing:

   • Before installation, perform a visual inspection to ensure there are no visible defects.
   • Test the module using a suitable tester to verify its functionality and parameters.

8. Safety:

   • Follow all safety guidelines and regulations when handling high-voltage components.
   • Use appropriate personal protective equipment (PPE) when working with the module.

(For reference only)