Details

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BUY RC28F128J3A150 https://www.utsource.net/itm/p/12604053.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	VCC	2.7	-	3.6	V	Operating supply voltage range
Operating Temperature	Toper	-40	-	85	掳C	Operating temperature range
Storage Temperature	Tstg	-65	-	150	掳C	Storage temperature range
Memory Size	-	-	128	-	Mbit	Total memory capacity
Data Retention	-	20	-	-	Years	Data retention at 85掳C
Write Cycle Endurance	-	10k	-	-	Cycles	Guaranteed write cycles per block
Read Cycle Endurance	-	-	-	100k	Cycles	Guaranteed read cycles per block
Page Program Time	tPP	-	2.5	-	ms	Maximum time to program a page (256 bytes)
Block Erase Time	tBE	-	200	-	ms	Maximum time to erase a block
Read Access Time	tR	-	50	-	ns	Maximum time from CE# low to first data byte
Data Output Hold Time	tOHZ	-	10	-	ns	Minimum time data is held valid after RE# high
Address Setup Time	tAS	-	20	-	ns	Minimum time address must be stable before CE# low
Address Hold Time	tAH	-	10	-	ns	Minimum time address must be held after CE# low
Write Enable Setup Time	tWES	-	20	-	ns	Minimum time WE# must be low before CE# low
Write Enable Hold Time	tWEH	-	10	-	ns	Minimum time WE# must be held low after CE# low
Chip Enable Pulse Width	tCEP	-	50	-	ns	Minimum pulse width for CE# low
Output Enable Setup Time	tOES	-	20	-	ns	Minimum time OE# must be low before CE# low
Output Enable Hold Time	tOEH	-	10	-	ns	Minimum time OE# must be held low after CE# low
Write Protect Setup Time	tWPS	-	20	-	ns	Minimum time WP# must be low before CE# low
Write Protect Hold Time	tWPH	-	10	-	ns	Minimum time WP# must be held low after CE# low

Instructions for Use

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the range of 2.7V to 3.6V.
   • Use appropriate decoupling capacitors near the power pins to minimize noise.

2. Temperature:

   • Operate the device within the temperature range of -40掳C to 85掳C.
   • Store the device between -65掳C and 150掳C.

3. Memory Operations:

   • Read Operation:
     • Set CE# low to enable the device.
     • Apply the address to the address lines.
     • Set OE# low to enable data output.
     • Data will be available on the data lines after the read access time (tR).
   • Write Operation:
     • Set CE# low to enable the device.
     • Apply the address to the address lines.
     • Set WE# low to initiate the write operation.
     • Provide the data to the data lines.
     • Ensure the write cycle time (tPP) is respected for successful programming.
   • Erase Operation:
     • Set CE# low to enable the device.
     • Apply the block address to the address lines.
     • Set WE# low to initiate the erase operation.
     • Ensure the block erase time (tBE) is respected for successful erasure.

4. Timing Requirements:

   • Adhere to the specified setup and hold times for all control signals (CE#, OE#, WE#, WP#) to ensure reliable operation.
   • Ensure the chip enable pulse width (tCEP) is met to avoid data corruption.

5. Data Retention and Endurance:

   • The device guarantees data retention for up to 20 years at 85掳C.
   • Each block can withstand up to 10,000 write cycles and 100,000 read cycles.

6. Handling:

   • Handle the device with care to avoid static discharge.
   • Follow proper soldering techniques to prevent thermal damage.

By following these parameters and instructions, you can ensure optimal performance and reliability of the RC28F128J3A150 flash memory device.

(For reference only)