Details

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BUY SPW24N60C3 https://www.utsource.net/itm/p/12604098.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage (Reverse)	V(BR)CEO	-	-	600	V
Emitter-Collector Voltage (Reverse)	V(BR)ECS	-	-	600	V
Collector-Emitter Saturation Voltage	VCE(sat)	-	1.8	2.3	V @ IC = 15A, IB = 1.5A
Collector Current (Continuous)	IC	-	-	24	A	Tc = 25°C
Collector Current (Pulse)	ICM	-	-	48	A	t = 10ms, Tj ≤ 150°C
Base-Emitter Saturation Voltage	VBE(sat)	1.2	1.8	2.5	V @ IC = 15A, IB = 1.5A
Storage Temperature Range	Tstg	-55	-	150	°C
Junction Temperature	Tj	-55	-	150	°C
Power Dissipation	PD	-	-	250	W	Tc = 25°C
Total Device Dissipation	Ptot	-	-	300	W	Tc = 25°C
Switching Time (Turn-On)	ton	-	120	200	ns	IC = 15A, VCC = 10V
Switching Time (Turn-Off)	toff	-	120	200	ns	IC = 15A, VCC = 10V

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to avoid damage from electrostatic discharge (ESD).
   • Mount the device on a heat sink if continuous high power dissipation is expected.

2. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure the junction temperature (Tj) remains within the specified range to prevent thermal runaway.

3. Circuit Design:

   • Use appropriate base resistors to ensure the transistor operates within its safe operating area (SOA).
   • Consider the switching times when designing circuits to minimize switching losses.

4. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.
   • Follow recommended storage conditions to maintain device integrity.

5. Testing:

   • Use a suitable testing setup to verify the parameters before integrating the device into the final application.
   • Ensure all connections are secure and free from shorts or open circuits.

6. Safety:

   • Always follow safety guidelines when working with high voltages and currents.
   • Use protective equipment such as gloves and safety glasses when handling the device.

(For reference only)