IRFS38N20DTRRP

IRFS38N20DTRRP


Specifications
SKU
12604234
Details

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Parameter Symbol Test Conditions Min Typical Max Unit
Drain-Source Voltage VDS - - 200 - V
Gate-Source Voltage VGS - -15 0 15 V
Continuous Drain Current (TC = 25掳C) ID(25掳C) VDS = 20V, TC = 25掳C - 8 - A
Continuous Drain Current (TC = 75掳C) ID(75掳C) VDS = 20V, TC = 75掳C - 5.6 - A
Pulse Drain Current (tp = 10ms, 1% Duty Cycle) ID(pulsed) VDS = 20V, tp = 10ms, 1% Duty Cycle - 16 - A
Total Power Dissipation (TC = 25掳C) PTOT(25掳C) - - 115 - W
Total Power Dissipation (TC = 75掳C) PTOT(75掳C) - - 70 - W
Junction Temperature TJ - - - 175 掳C
Storage Temperature Range TSTG - -65 - 150 掳C
Gate Charge QG VGS = 10V, ID = 8A - 44 - nC
Input Capacitance Ciss VDS = 20V, f = 1MHz - 1900 - pF
Output Capacitance Coss VDS = 20V, f = 1MHz - 55 - pF
Reverse Transfer Capacitance Crss VDS = 20V, f = 1MHz - 130 - pF
On-State Resistance (TC = 25掳C) RDS(on)(25掳C) VGS = 10V, ID = 8A - 0.038 -
On-State Resistance (TC = 75掳C) RDS(on)(75掳C) VGS = 10V, ID = 8A - 0.057 -
Threshold Voltage VGS(th) ID = 250渭A 2.0 3.0 4.0 V
Maximum Gate-Source Voltage VGS(max) - - - 20 V

Instructions for Use:

  1. Handling Precautions:

    • Handle the device with care to avoid static discharge damage.
    • Use proper ESD protection when handling the device.
  2. Mounting and Assembly:

    • Ensure that the device is mounted on a suitable heatsink to dissipate heat effectively.
    • Follow the recommended PCB layout guidelines to minimize parasitic inductances and ensure stable operation.
  3. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table.
    • Ensure that the junction temperature does not exceed 175掳C.
    • Operate within the specified storage temperature range to prevent damage.
  4. Gate Drive:

    • Apply a gate-source voltage (VGS) within the recommended range to ensure reliable switching.
    • Use a gate resistor to control the rise and fall times of the gate signal, which helps in reducing switching losses and electromagnetic interference (EMI).
  5. Thermal Management:

    • Monitor the temperature of the device during operation and ensure adequate cooling.
    • Use thermal paste or thermal interface materials to improve heat transfer between the device and the heatsink.
  6. Testing and Verification:

    • Verify the device parameters using the test conditions specified in the table.
    • Perform functional tests under actual operating conditions to ensure the device meets the application requirements.
(For reference only)

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