Details
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| Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 200 | - | V |
| Gate-Source Voltage | VGS | - | -15 | 0 | 15 | V |
| Continuous Drain Current (TC = 25掳C) | ID(25掳C) | VDS = 20V, TC = 25掳C | - | 8 | - | A |
| Continuous Drain Current (TC = 75掳C) | ID(75掳C) | VDS = 20V, TC = 75掳C | - | 5.6 | - | A |
| Pulse Drain Current (tp = 10ms, 1% Duty Cycle) | ID(pulsed) | VDS = 20V, tp = 10ms, 1% Duty Cycle | - | 16 | - | A |
| Total Power Dissipation (TC = 25掳C) | PTOT(25掳C) | - | - | 115 | - | W |
| Total Power Dissipation (TC = 75掳C) | PTOT(75掳C) | - | - | 70 | - | W |
| Junction Temperature | TJ | - | - | - | 175 | 掳C |
| Storage Temperature Range | TSTG | - | -65 | - | 150 | 掳C |
| Gate Charge | QG | VGS = 10V, ID = 8A | - | 44 | - | nC |
| Input Capacitance | Ciss | VDS = 20V, f = 1MHz | - | 1900 | - | pF |
| Output Capacitance | Coss | VDS = 20V, f = 1MHz | - | 55 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = 20V, f = 1MHz | - | 130 | - | pF |
| On-State Resistance (TC = 25掳C) | RDS(on)(25掳C) | VGS = 10V, ID = 8A | - | 0.038 | - | 惟 |
| On-State Resistance (TC = 75掳C) | RDS(on)(75掳C) | VGS = 10V, ID = 8A | - | 0.057 | - | 惟 |
| Threshold Voltage | VGS(th) | ID = 250渭A | 2.0 | 3.0 | 4.0 | V |
| Maximum Gate-Source Voltage | VGS(max) | - | - | - | 20 | V |
Instructions for Use:
Handling Precautions:
- Handle the device with care to avoid static discharge damage.
- Use proper ESD protection when handling the device.
Mounting and Assembly:
- Ensure that the device is mounted on a suitable heatsink to dissipate heat effectively.
- Follow the recommended PCB layout guidelines to minimize parasitic inductances and ensure stable operation.
Operating Conditions:
- Do not exceed the maximum ratings specified in the table.
- Ensure that the junction temperature does not exceed 175掳C.
- Operate within the specified storage temperature range to prevent damage.
Gate Drive:
- Apply a gate-source voltage (VGS) within the recommended range to ensure reliable switching.
- Use a gate resistor to control the rise and fall times of the gate signal, which helps in reducing switching losses and electromagnetic interference (EMI).
Thermal Management:
- Monitor the temperature of the device during operation and ensure adequate cooling.
- Use thermal paste or thermal interface materials to improve heat transfer between the device and the heatsink.
Testing and Verification:
- Verify the device parameters using the test conditions specified in the table.
- Perform functional tests under actual operating conditions to ensure the device meets the application requirements.
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