Details

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BUY IRF740PBF. https://www.utsource.net/itm/p/12604244.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	V(DS)			400	V
Gate-Source Voltage	V(GS)	-15		20	V
Continuous Drain Current	I(D)		7.6		A	Tc = 25掳C
Pulse Drain Current	I(DM)		30		A	t = 10渭s, Duty Cycle = 1%
Power Dissipation	P(TOT)		68		W	TC = 25掳C
Junction Temperature	T(J)			150	掳C
Storage Temperature	T(STG)	-55		150	掳C
Total Gate Charge	Q(G)		90		nC	VGS = 10V, IDS = 5A
Input Capacitance	C(ISS)		1300		pF	VDS = 20V, f = 1MHz
Output Capacitance	C(OSS)		350		pF	VDS = 20V, f = 1MHz
Reverse Transfer Capacitance	C(RSS)		950		pF	VDS = 20V, VGS = 0V, f = 1MHz
R DS(on)	R(DS(on))	0.55		0.75	惟	VGS = 10V, ID = 5A

Instructions for Use:

1. Handling Precautions: The IRF740PBF is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection.
2. Heat Sinking: For applications requiring high current or power dissipation, ensure adequate heat sinking to maintain junction temperature within limits.
3. Gate Drive Requirements: Ensure the gate drive voltage does not exceed the maximum rating of 卤20V. A typical gate drive voltage range is between 10V to 15V for optimal performance.
4. Current Limiting: Implement appropriate current limiting resistors if necessary to protect the device from exceeding its continuous drain current ratings.
5. Mounting: Proper mounting techniques should be used to ensure good thermal contact with heatsinks or PCBs.
6. Storage: Store in a dry environment within the specified storage temperature range to avoid damage.

(For reference only)