Details

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BUY RFP1281 https://www.utsource.net/itm/p/12604255.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	BVdss	-	600	-	V	Drain-Source Breakdown Voltage
Continuous Drain Current	Id	-	12	-	A	Continuous Drain Current at TC = 25掳C
Gate Threshold Voltage	Vgs(th)	1.0	2.0	3.0	V	Gate Threshold Voltage
On-State Resistance	Rds(on)	-	7.5	-	惟	On-State Resistance at Vgs = 10V, Id = 4A
Input Capacitance	Cin	-	280	-	pF	Input Capacitance
Total Power Dissipation	Ptot	-	125	-	W	Total Power Dissipation
Junction Temperature	Tj	-20	-	175	掳C	Operating Junction Temperature

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Handle with care to avoid damage to the gate terminal.

2. Biasing:

   • Apply gate voltage within the specified threshold range to ensure reliable operation.
   • Avoid exceeding the maximum gate-source voltage to prevent damage.

3. Current Limitation:

   • Do not exceed the continuous drain current rating; consider derating for higher temperatures.

4. Thermal Management:

   • Monitor junction temperature to prevent overheating, especially under high load conditions.

5. Storage and Packaging:

   • Store in a dry environment to prevent moisture damage.
   • Follow anti-static precautions during handling to protect sensitive components.

6. Testing:

   • Perform initial testing at low power levels to verify correct operation before full-load testing.

(For reference only)