Details

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BUY DS1286 https://www.utsource.net/itm/p/12604279.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	VCC	Operating	4.75	5	5.25	V
Supply Current	ICC	Active (Typical)	-	30	-	渭A
Supply Current	ICC	Standby (Typical)	-	1	-	渭A
Operating Temperature	Toper	-	-40	-	85	掳C
Storage Temperature	Tstg	-	-65	-	150	掳C
Output High Voltage	VOH	IOL = -400渭A	2.4	-	VCC-0.4	V
Output Low Voltage	VOL	IOH = 1.6mA	0	-	0.4	V
Input Leakage Current	IIH	VI = VCC	-1	-	1	渭A
Input Leakage Current	IIL	VI = 0V	-1	-	1	渭A
Write Cycle Time	tWC	-	10	-	-	ms
Read Access Time	tRC	-	0	250	550	ns
Data Hold Time	tDH	-	0	-	50	ns
Address Setup Time	tAS	-	0	25	100	ns
Address Hold Time	tAH	-	0	-	50	ns
Chip Select Pulse Width	tCS	-	50	-	-	ns

Instructions for Using the DS1286

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the specified range of 4.75V to 5.25V.
   • The device operates with a typical active current of 30渭A and a standby current of 1渭A.

2. Temperature Considerations:

   • The operating temperature range is from -40掳C to 85掳C.
   • The storage temperature range is from -65掳C to 150掳C.

3. Input/Output Levels:

   • Output high voltage (VOH) should be at least 2.4V when the output current (IOL) is -400渭A.
   • Output low voltage (VOL) should not exceed 0.4V when the output current (IOH) is 1.6mA.
   • Input leakage current (IIH and IIL) should be within 卤1渭A.

4. Timing Parameters:

   • The write cycle time (tWC) is 10ms.
   • The read access time (tRC) is between 250ns and 550ns.
   • The data hold time (tDH) is 50ns.
   • The address setup time (tAS) is between 25ns and 100ns.
   • The address hold time (tAH) is 50ns.
   • The chip select pulse width (tCS) is 50ns.

5. Usage:

   • Connect the VCC pin to the power supply and GND to ground.
   • Use the chip select (CS), read/write (R/W), and enable (OE) pins to control data access.
   • Ensure that the address lines (A0-A13) are correctly set to access the desired memory location.
   • Data input/output (D0-D7) lines should be connected to the system bus for data transfer.

6. Programming:

   • To write data, set the R/W line low and the CS line low, then provide the address and data.
   • To read data, set the R/W line high and the CS line low, then provide the address and read the data from the D0-D7 lines.

7. Handling:

   • Handle the device with care to avoid electrostatic discharge (ESD) damage.
   • Store the device in a controlled environment within the specified temperature range.

8. Troubleshooting:

   • If the device does not respond, check the power supply and connections.
   • Verify that the timing parameters are met.
   • Ensure that the address and data lines are correctly configured.

By following these instructions, you can effectively use the DS1286 in your application.

(For reference only)