Details

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BUY FGH40N60SMDTU https://www.utsource.net/itm/p/12604382.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-60		60	V	Maximum drain-source voltage
Gate-Source Voltage	VGS	-20		20	V	Maximum gate-source voltage
Continuous Drain Current	ID		40		A	Continuous drain current at Tc = 25°C
Pulse Drain Current	IDM		120		A	Pulse drain current (t < 10 ms)
Power Dissipation	PD			130	W	Maximum power dissipation at Tc = 25°C
Junction Temperature	TJ	-55		175	°C	Operating junction temperature range
Storage Temperature	TSTG	-55		175	°C	Operating storage temperature range
Total Gate Charge	Qg		85		nC	Total gate charge at VGS = 10V
Input Capacitance	Ciss		2900		pF	Input capacitance at VDS = 15V, VGS = 0V
Output Capacitance	Coss		450		pF	Output capacitance at VDS = 15V, VGS = 0V
Reverse Transfer Capacitance	Crss		550		pF	Reverse transfer capacitance at VDS = 15V, VGS = 0V
RDS(on)	RDS(on)		0.17		Ω	On-resistance at VGS = 10V, ID = 20A

Instructions:

1. Handling Precautions: Ensure proper handling of the FGH40N60SMDTU MOSFET to avoid damage from electrostatic discharge (ESD). Use ESD protection measures such as wrist straps and anti-static mats.

2. Mounting: When mounting the device on a PCB, ensure that the thermal and electrical connections are secure and meet the manufacturer’s specifications for soldering profiles.

3. Heat Management: Given the maximum power dissipation, consider heat sinking or other cooling methods if operating near the limits to maintain device reliability.

4. Voltage and Current Ratings: Do not exceed the maximum ratings for drain-source voltage, gate-source voltage, continuous drain current, and power dissipation to prevent device failure.

5. Capacitance Considerations: Account for input, output, and reverse transfer capacitances in circuit design to ensure stability and performance.

6. Storage Conditions: Store the device within the specified storage temperature range to avoid degradation of its properties.

7. Testing: Verify the functionality of the device using appropriate test circuits that do not exceed the operational parameters listed in the table.

8. Application Specific Guidelines: Refer to application notes provided by the manufacturer for specific guidelines related to the use of this MOSFET in particular applications.

(For reference only)