Details

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BUY FA5612N-D1-TE1 https://www.utsource.net/itm/p/12604424.html

Parameter	Description	Value	Unit
Part Number	Full part identifier	FA5612N-D1-TE1	-
Type	Component type	MOSFET	-
Package	Physical package	DPAK	-
Drain-Source Voltage	Maximum voltage between drain and source	60	V
Gate-Source Voltage	Maximum voltage between gate and source	卤20	V
Continuous Drain Current	Max current through drain in continuous operation	18.4	A
Pulse Drain Current	Max current through drain in pulse operation	67	A
Power Dissipation	Maximum power dissipation	30	W
Junction Temperature	Maximum operating temperature of the junction	-55 to +175	掳C
Thermal Resistance	Junction to ambient thermal resistance	62.5	掳C/W
Gate Charge	Total gate charge	95	nC
Input Capacitance	Capacitance between gate and source	1350	pF
Output Capacitance	Capacitance between drain and source	145	pF
Reverse Transfer Capacitance	Capacitance between drain and gate	38	pF

Instructions:

1. Handling Precautions: The FA5612N-D1-TE1 is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
2. Mounting: Ensure proper mounting to a heatsink if operating near maximum power dissipation to maintain junction temperature within safe limits.
3. Storage: Store in a dry, cool environment away from direct sunlight and corrosive materials.
4. Soldering: Follow recommended soldering profiles to avoid damage. Peak soldering temperature should not exceed 260掳C for more than 10 seconds.
5. Testing: Verify all connections post-installation to ensure correct functionality and adherence to circuit design specifications.
6. Application: Suitable for applications requiring high efficiency and low on-resistance, such as DC-DC converters, motor drivers, and general switching circuits.

(For reference only)