Details

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BUY HCNW4506#300 https://www.utsource.net/itm/p/12604470.html

Parameter	Value	Unit
Part Number	HCNW4506#300	-
Type	Phototransistor	-
Emitter Wavelength	850	nm
Collector-Emitter Voltage (VCE)	30	V
Collector Current (IC)	100	渭A
Sensitivity (S)	0.2	A/W
Rise Time (tr)	10	渭s
Fall Time (tf)	10	渭s
Operating Temperature Range	-40 to 85	掳C
Storage Temperature Range	-40 to 125	掳C
Package Type	Surface Mount	-
Lead Finish	Matte Tin	-

Instructions for Use:

1. Handling:

   • Handle with care to avoid damage to the phototransistor.
   • Use appropriate ESD protection to prevent static damage.

2. Mounting:

   • Ensure the surface mount package is aligned correctly on the PCB.
   • Apply solder paste or flux as needed.
   • Use a reflow soldering process with appropriate temperature profiles to ensure reliable bonding.

3. Electrical Connections:

   • Connect the emitter to the ground (GND).
   • Connect the collector to the load or signal processing circuit.
   • Ensure the voltage applied to the collector-emitter does not exceed the maximum rated voltage (30V).

4. Optical Alignment:

   • Position the phototransistor such that the light source is directly incident on the active area.
   • Use optical filters if necessary to block unwanted wavelengths.

5. Environmental Considerations:

   • Operate within the specified temperature range to ensure optimal performance and longevity.
   • Store in a dry, cool place to prevent moisture damage.

6. Testing:

   • Test the phototransistor using a known light source and measure the collector current to verify functionality.
   • Ensure the rise and fall times meet the required specifications for your application.

(For reference only)