Details

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BUY GIB10B60KD1 https://www.utsource.net/itm/p/12604557.html

Parameter	Value	Unit
Part Number	GIB10B60KD1	-
Type	IGBT	-
Collector-Emitter Voltage (Vce)	600	V
Continuous Collector Current (Ic)	10	A
Pulse Collector Current (Icm)	20	A
Gate-Emitter Voltage (Vge)	卤20	V
Power Dissipation (Ptot)	180	W
Junction Temperature (Tj)	-40 to 150	掳C
Storage Temperature (Tstg)	-40 to 125	掳C
Package	TO-247	-

Instructions for Use:

1. Mounting: Ensure the device is mounted on a suitable heatsink to manage heat dissipation, especially under high current or power conditions.
2. Handling: Handle with care to avoid damage to the pins and package. Use appropriate anti-static measures.
3. Soldering: Solder within recommended temperature and time limits to prevent thermal damage. Typically, do not exceed 260掳C for more than 10 seconds.
4. Biasing: Apply gate voltage within the specified limits to ensure reliable operation and prevent damage.
5. Testing: Before full-scale application, test the device under actual operating conditions to verify performance and reliability.
6. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.

(For reference only)