IRFPG30PBF

IRFPG30PBF


Specifications
Details

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Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage V(DS) - - 30 V
Gate-Source Voltage V(GS) -15 - 12 V
Continuous Drain Current I(D) - - 6.8 A Tc = 25掳C
Pulse Drain Current I(D pul) - - 35 A t = 10 ms, Duty = 1%
Power Dissipation P(TOT) - - 47 W Tc = 25掳C
Junction Temperature T(j) - - 150 掳C
Storage Temperature T(stg) -55 - 150 掳C

Instructions for IRFPG30PBF

  1. Handling Precautions:

    • The device is sensitive to static electricity; handle with ESD precautions.
    • Avoid exceeding the maximum ratings listed in the table to prevent damage.
  2. Mounting:

    • Ensure proper heat sinking if operating at or near maximum current and power dissipation levels.
    • Mount the device on a flat surface to ensure good thermal contact.
  3. Operation:

    • Operate within the specified temperature range to maintain reliability.
    • For pulse operation, ensure that the duty cycle does not exceed recommended limits to avoid overheating.
  4. Testing:

    • When testing the device, use appropriate test conditions as noted in the parameter table (e.g., Tc = 25掳C).
  5. Storage:

    • Store in a dry, cool place within the storage temperature range to prevent damage from moisture or extreme temperatures.
(For reference only)

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