Details

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Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Breakdown Voltage	V(BR)DSS		-	600	-	V
Forward Transconductance	gfs	VGS = 4V, ID = 12.5A	-	28	-	S
Input Capacitance	Ciss	VDS = 30V, f = 1MHz	-	1470	-	pF
Output Capacitance	Coss	VDS = 30V, f = 1MHz	-	195	-	pF
Total Gate Charge	Qg	VGS = ±15V, ID = 12.5A	-	90	-	nC
On-State Resistance	RDS(on)	VGS = 10V, ID = 12.5A	-	45	-	mΩ

Instructions for Use:

1. Installation:

   • Ensure the device is handled with care to avoid damage to the leads and body.
   • Mount the device on a suitable heatsink if necessary to dissipate heat effectively.

2. Biasing:

   • Apply gate-source voltage (VGS) within the specified limits to control the device operation.
   • Ensure the gate drive circuit can supply sufficient current to charge and discharge the gate capacitance quickly.

3. Operation:

   • Operate the device within the maximum ratings provided in the parameter table.
   • Keep junction temperature (TJ) within operational limits by adequate cooling.

4. Storage:

   • Store in a dry place away from moisture and corrosive substances.
   • Handle with ESD precautions to prevent damage.

5. Testing:

   • Perform initial testing under controlled conditions to verify parameters such as V(BR)DSS, RDS(on), and gate charge.
   • Regularly inspect for signs of wear or damage.

For detailed specifications and more comprehensive guidelines, refer to the official datasheet provided by STMicroelectronics.

(For reference only)