Details

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BUY FQPF8N90CT https://www.utsource.net/itm/p/12604774.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	IDS = 250渭A, TC = 25掳C	-	900	-	V
Gate-Source Voltage	VGS	ID = 0.1mA, TC = 25掳C	-10	-	10	V
Continuous Drain Current	ID	TC = 25掳C	-	8	-	A
Pulse Drain Current	Ipp	tP = 300渭s, Duty Cycle = 1%	-	64	-	A
Total Power Dissipation	PD	TC = 25掳C	-	187	-	W
Junction Temperature	TJ	-	-55	-	150	掳C
Storage Temperature Range	TSTG	-	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions: The FQPF8N90CT is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
2. Mounting: Ensure proper heat sinking if operating at or near maximum power dissipation levels to maintain junction temperature within safe limits.
3. Gate Drive: Apply gate-source voltage within the specified range to avoid damaging the device.
4. Continuous Operation: Do not exceed the continuous drain current rating to prevent overheating and potential failure.
5. Pulse Operation: For pulse applications, ensure that the pulse duration and duty cycle do not exceed the specified limits to avoid exceeding the maximum allowable temperature rise.
6. Storage: Store in a dry environment and follow recommended storage temperature ranges to ensure reliability.
7. Testing: Verify all parameters under specified test conditions before deployment in final applications.

(For reference only)