Details

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BUY MK6116N-15 https://www.utsource.net/itm/p/12604784.html

Parameter	Description	Value	Unit
Part Number	Device Identifier	MK6116N-15
Type	Device Type	EEPROM
Organization	Memory Organization	16K x 8	bits
Voltage Supply	Operating Voltage Range	2.5 to 5.5	V
Data Retention	Data Retention Time	10	years
Endurance	Write/erase Cycles	1,000,000	cycles
Access Time	Typical Access Time	70	ns
Package	Package Type	SOIC-8
Operating Temp.	Operating Temperature Range	-40 to 85	掳C

Instructions for MK6116N-15

1. Power Supply: Ensure the power supply voltage is within the specified range of 2.5V to 5.5V to avoid damage to the device.

2. Memory Operations:

   • Read Operation: Apply the appropriate address and read command to access data stored in the memory.
   • Write Operation: Use the write enable (WREN) command before performing any write operations. Follow the specific timing requirements for reliable data writing.

3. Data Retention and Endurance:

   • The device retains data for up to 10 years under normal operating conditions.
   • It supports up to 1,000,000 write/erase cycles per sector.

4. Temperature Considerations: Operate the device within the temperature range of -40掳C to +85掳C to ensure reliable performance.

5. Package Handling: Handle the SOIC-8 package with care to prevent physical damage. Follow standard ESD protection guidelines during installation.

6. Access Time: Account for a typical access time of 70 nanoseconds when designing circuits or systems that include this EEPROM.

7. Programming Tools: Use compatible programming tools or software for initializing or updating the EEPROM content as required by your application.

(For reference only)