Details

---

BUY 30CPQ150PBF https://www.utsource.net/itm/p/12604791.html

Parameter	Description	Value
Part Number	Full part identification	30CPQ150PBF
Type	Type of device	Power MOSFET
Package	Encapsulation type	TO-263 (D2PAK)
VDSS	Drain-to-source voltage	30V
IDM	Maximum pulsed drain current	150A
RDS(on)	On-state resistance at VGS = 10V	4.5 m惟
VGS(th)	Gate threshold voltage	2V to 4V
Qg	Total gate charge	89 nC
Input Capacitance	Capacitance between gate and source	2700 pF
Output Capacitance	Capacitance between drain and source	90 pF
Reverse Transfer Capacitance	Capacitance from gate to drain	22 pF
Operating Temperature Range	Junction temperature range	-55掳C to +175掳C
Storage Temperature Range	Storage temperature range	-65掳C to +175掳C

Instructions for Use:

1. Mounting: Ensure proper heat dissipation by mounting the device on a heatsink if operating near maximum current.
2. Handling: Handle with care to avoid damage to leads and body. Follow ESD protection guidelines.
3. Soldering: Preheat the board to minimize thermal shock. Soldering temperature should not exceed 260掳C for more than 10 seconds.
4. Biasing: Ensure that the gate voltage is within the specified limits to prevent damage to the gate oxide.
5. Testing: Perform initial testing under controlled conditions to validate operation parameters before full-scale deployment.
6. Safety: Always use appropriate safety measures when handling high currents and voltages.

(For reference only)