AM29F040B-90JC

AM29F040B-90JC


Specifications
Details

BUY AM29F040B-90JC https://www.utsource.net/itm/p/12604793.html

Parameter Description Value Unit
Device Type Flash Memory AM29F040B-90JC -
Storage Capacity Total memory size 512 K x 8 bits
Organization Internal organization 64K x 8 bits
Supply Voltage (Vcc) Operating voltage range 2.7 to 3.6 V
Access Time Maximum access time 90 ns
Package Type Physical package TSOP(II)-40 -
Temperature Range Industrial temperature range -40 to +85 掳C
Programming Voltage Programming operation voltage 12.0 V
Erase Voltage Block erase operation voltage 12.0 V
Write Cycle Time Time required for a write cycle 300 渭s
Erase Cycle Time Time required for a block erase cycle 4000 ms
Data Retention Guaranteed data retention period 10 years
Endurance Number of guaranteed program/erase cycles 100,000 cycles

Instructions:

  1. Power Supply: Ensure the supply voltage is within the specified range (2.7V to 3.6V).
  2. Programming: Apply 12V to the programming pin when writing data.
  3. Erase Operation: Use 12V on the erase pin for block erasure.
  4. Access Timing: Respect the 90ns access time for reliable read operations.
  5. Write/Erase Cycles: Limit the number of write and erase cycles to ensure longevity.
  6. Environmental Conditions: Operate within the industrial temperature range (-40掳C to +85掳C) for optimal performance.
  7. Handling: Handle with care to avoid damage to the TSOP(II)-40 package.
  8. Data Integrity: For critical applications, consider the 10-year data retention specification.
(For reference only)

View more about AM29F040B-90JC on main site