Details

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BUY NTD3055L104T4G https://www.utsource.net/itm/p/12604952.html

Parameter	Symbol	Conditions	Min	Typical	Max	Unit
Drain-Source Voltage	VDS	Continuous	-		60	V
Gate-Source Voltage	VGS		-10		20	V
Drain Current	ID	@ VGS = 10V, 25掳C	-		58	A
RDS(on)	RDS(on)	@ VGS = 10V, 25掳C	-	4.0	-	m惟
Input Capacitance	Ciss		-	1930	-	pF
Output Capacitance	Coss		-	470	-	pF
Reverse Transfer Capacitance	Crss		-	460	-	pF
Total Gate Charge	Qg		-	55	-	nC

Instructions for Use:

1. Voltage Ratings:

   • Ensure that the drain-source voltage (VDS) does not exceed 60V to prevent damage to the device.
   • The gate-source voltage (VGS) should be kept within the range of -10V to +20V.

2. Current Handling:

   • The maximum continuous drain current (ID) is 58A at a gate-source voltage of 10V and a temperature of 25掳C. Adjust for higher temperatures as per derating curves.

3. On-State Resistance:

   • The on-state resistance (RDS(on)) is typically 4.0 m惟 at 25掳C and VGS = 10V. This value increases with temperature.

4. Capacitance Considerations:

   • Account for input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in circuit design, especially in switching applications.

5. Gate Charge:

   • The total gate charge (Qg) is 55 nC, which impacts switching losses. Optimize drive circuits considering this parameter.

6. Thermal Management:

   • Ensure adequate heat sinking or cooling methods are employed to manage the thermal dissipation based on the power dissipation and operating conditions.

7. Handling Precautions:

   • Handle the NTD3055L104T4G with care to avoid electrostatic discharge (ESD) damage. Use proper ESD protection measures during handling and installation.

(For reference only)