Details

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BUY FCH25N60N https://www.utsource.net/itm/p/12605031.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Drain-Source Voltage	VDS	-	-	600	V	-
Gate-Source Voltage	VGS	-10	-	20	V	-
Continuous Drain Current	ID	-	25	-	A	TC = 25掳C
Pulse Drain Current	ID(p)	-	130	-	A	tp = 10 渭s, IG = 10 A
Power Dissipation	PTOT	-	-	290	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-
Total Gate Charge	QG	-	105	-	nC	VGS = 15 V
Input Capacitance	Ciss	-	4480	-	pF	VDS = 400 V
Output Capacitance	Coss	-	120	-	pF	VDS = 400 V
Reverse Transfer Capacitance	Crss	-	145	-	pF	VDS = 400 V
RDS(on) at VGS = 10 V	RDS(on)	-	0.16	-	惟	ID = 25 A
RDS(on) at VGS = 4.5 V	RDS(on)	-	0.25	-	惟	ID = 25 A

Instructions for Use:

1. Operating Conditions:

   • Ensure that the drain-source voltage (V_DS) does not exceed 600 V.
   • The gate-source voltage (V_GS) should be within the range of -10 V to +20 V.
   • The continuous drain current (I_D) should not exceed 25 A at a case temperature (T_C) of 25掳C.
   • For pulse operations, the peak drain current (I_D(p)) can reach up to 130 A for a pulse duration of 10 渭s with a gate current (I_G) of 10 A.

2. Thermal Management:

   • The maximum power dissipation (P_TOT) is 290 W at a case temperature of 25掳C. Proper heat sinking is essential to manage the junction temperature (T_J), which should not exceed 175掳C.
   • The storage temperature range (T_STG) is from -55掳C to 150掳C. Ensure the device is stored within this range to avoid damage.

3. Capacitance and Charge:

   • The input capacitance (C_iss) is approximately 4480 pF at V_DS = 400 V.
   • The output capacitance (C_oss) is approximately 120 pF at V_DS = 400 V.
   • The reverse transfer capacitance (C_rss) is approximately 145 pF at V_DS = 400 V.
   • The total gate charge (Q_G) is approximately 105 nC at V_GS = 15 V.

4. On-Resistance:

   • The on-resistance (R_DS(on)) is 0.16 惟 at V_GS = 10 V and 0.25 惟 at V_GS = 4.5 V, both measured at I_D = 25 A.

5. Handling and Storage:

   • Handle the device with care to avoid static discharge, which can damage the gate oxide.
   • Store the device in a dry environment within the specified storage temperature range.

6. Mounting and Assembly:

   • Ensure proper mounting to a heatsink to dissipate heat effectively.
   • Follow recommended PCB layout guidelines to minimize parasitic inductances and ensure reliable operation.

7. Testing and Troubleshooting:

   • Test the device under controlled conditions to verify its performance parameters.
   • If the device fails to meet specifications, check for proper installation, thermal management, and circuit design.

(For reference only)