Details

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BUY AM29F800BT-70SF https://www.utsource.net/itm/p/12605034.html

Parameter	Description	Value	Unit
Device Type	Flash Memory	1 M x 8	-
Package	Plastic Fine Pitch Ball Grid Array (PFBGA)	169 balls	-
Supply Voltage (Vcc)	Operating Range	3.0 to 3.6	V
Standby Current (Icc)	Typical at Vcc = 3.3V	10	渭A
Active Current (Icc)	Typical at Vcc = 3.3V, fCLK = 70 MHz	45	mA
Access Time (tACC)	Typical at Vcc = 3.3V, fCLK = 70 MHz	70	ns
Block Erase Time (tBERS)	Typical at Vcc = 3.3V	200	ms
Chip Erase Time (tCERS)	Typical at Vcc = 3.3V	4000	ms
Programming Time (tPROG)	Typical at Vcc = 3.3V	200	渭s
Data Retention	Minimum	10	years
Operating Temperature (Tamb)	Industrial	-40 to +85	掳C
Storage Temperature (Tstg)	-65 to +150	掳C
Endurance (Program/Erase Cycles)	Minimum	100,000	cycles

Instructions for Use

1. Power Supply:

   • Ensure that the supply voltage (Vcc) is within the specified range of 3.0 to 3.6V.
   • Connect the Vcc pin to the power supply and the GND pin to ground.

2. Clock Signal:

   • Apply a clock signal (fCLK) to the CLK pin with a frequency up to 70 MHz for optimal performance.

3. Address and Data Lines:

   • Connect the address lines (A0-A19) to the appropriate address decoder or controller.
   • Connect the data lines (DQ0-DQ7) to the data bus.

4. Control Signals:

   • Use the control signals (CE#, OE#, WE#, and ADV#) to manage read, write, and erase operations.
     • CE# (Chip Enable): Low to enable the device.
     • OE# (Output Enable): Low to enable data output.
     • WE# (Write Enable): Low to initiate a write operation.
     • ADV# (Address Latch): Low to latch the address.

5. Programming:

   • To program a memory location, set the address on the address lines, apply the data on the data lines, and assert the WE# and CE# signals.

6. Erase Operations:

   • For block erase, set the block address and assert the appropriate erase command sequence.
   • For chip erase, assert the chip erase command sequence.

7. Data Retention:

   • Store the device in a temperature-controlled environment to ensure data retention for up to 10 years.

8. Temperature Considerations:

   • Operate the device within the industrial temperature range of -40掳C to +85掳C.
   • Store the device within the storage temperature range of -65掳C to +150掳C.

9. Endurance:

   • The device is rated for a minimum of 100,000 program/erase cycles.

10. Handling:

    • Handle the device with care to avoid static discharge and physical damage.
    • Follow proper ESD (Electrostatic Discharge) precautions when handling the device.

For detailed programming and erase sequences, refer to the specific application notes and datasheets provided by the manufacturer.

(For reference only)