3SK51

3SK51


Specifications
Details

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Parameter Value Unit
Collector-Emitter Voltage (VCEO) 600 V
Collector-Base Voltage (VCBO) 600 V
Emitter-Base Voltage (VEBO) 5 V
Continuous Collector Current (IC) 8 A
Pulse Collector Current (ICM) 12 A
Power Dissipation (Ptot) 120 W
Junction Temperature (Tj) -55 to 150 掳C
Storage Temperature (Tstg) -55 to 150 掳C

Instructions for Use:

  1. Handling Precautions: Avoid exceeding the maximum ratings listed in the parameter table to prevent damage to the device.
  2. Mounting: Ensure proper heat sinking for efficient heat dissipation, especially when operating near maximum power dissipation.
  3. Biasing: Carefully set the biasing conditions to operate within the safe operating area (SOA).
  4. Storage and Operation: Keep the device within the specified storage and junction temperature ranges to ensure reliability.
  5. Testing: Perform initial testing under controlled conditions to validate performance parameters before full-scale deployment.
(For reference only)

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