Details

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BUY SKIIP35NAB12T4V1 https://www.utsource.net/itm/p/12605062.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Continuous Drain Current	ID	-	1200	-	A	@ Tc = 25掳C, VGS = 15V
Pulse Drain Current	IDM	-	1800	-	A	@ Tc = 25掳C, t = 10ms, Duty Cycle = 1%
Drain-Source Voltage	VDS	-	1700	-	V
Gate-Source Voltage	VGS	-15	-	20	V
Power Dissipation	PD	-	2500	-	W	@ Tc = 25掳C
Junction Temperature	TJ	-55	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance	RthJC	-	0.1	-	K/W	Junction to Case
Total Gate Charge	Qg	-	140	-	nC	@ VDS = 600V, ID = 120A, VGS = 15V

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Handle the device with care to avoid mechanical damage.

2. Electrical Connections:

   • Connect the drain (D) to the high-voltage side of the circuit.
   • Connect the source (S) to the low-voltage side or ground.
   • Apply the gate (G) voltage carefully to control the switching of the device.

3. Gate Drive:

   • Use a gate resistor to limit the current and prevent oscillations.
   • Ensure the gate voltage is within the specified range to avoid damaging the device.

4. Thermal Management:

   • Monitor the junction temperature to ensure it does not exceed 175掳C.
   • Use thermal paste between the device and the heatsink to improve thermal conductivity.

5. Pulse Operation:

   • For pulse operation, ensure the duty cycle and pulse duration are within the specified limits to avoid overheating.

6. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Avoid exposure to extreme temperatures.

7. Safety Precautions:

   • Always use appropriate safety equipment when handling high-voltage circuits.
   • Follow all relevant electrical safety guidelines and regulations.

8. Testing:

   • Test the device in a controlled environment to ensure it meets the required specifications before integrating it into the final application.

(For reference only)