Details

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BUY SKIIP11NAB12T4V1 https://www.utsource.net/itm/p/12605134.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE	-	-	1200	V
Gate-Emitter Voltage	VGE	-15	-	15	V
Continuous Collector Current	IC	-	1200	-	A	at TC = 25掳C
Pulse Collector Current	IC pul	-	1800	-	A	tp = 10 ms, IG = 10 A
Power Dissipation	PT	-	3600	-	W	at TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	RthJC	-	0.015	-	K/W
Turn-On Time	ton	-	0.8	-	渭s	IC = 1200 A, VGE = 15 V
Turn-Off Time	toff	-	1.2	-	渭s	IC = 1200 A, VGE = -15 V

Instructions:

1. Mounting and Handling:

   • Ensure that the device is mounted on a heatsink with adequate thermal conductivity.
   • Use appropriate handling techniques to avoid damage to the leads and the body of the device.

2. Electrical Connections:

   • Connect the collector (C) to the load, the emitter (E) to the return path, and the gate (G) to the control circuit.
   • Ensure that the gate-emitter voltage (V_GE) does not exceed the maximum rating of 卤15V.

3. Thermal Management:

   • The device should be operated within the specified junction temperature range (up to 175掳C).
   • Use a thermal interface material (TIM) between the device and the heatsink to ensure good thermal contact.

4. Operational Limits:

   • Do not exceed the maximum collector-emitter voltage (1200V) or the continuous collector current (1200A).
   • For pulse operation, ensure that the pulse duration (t_p) and peak current (I_{C pul}) do not exceed the specified limits.

5. Storage:

   • Store the device in a dry environment within the storage temperature range (-55掳C to 150掳C).

6. Testing:

   • When testing the device, use a controlled environment to avoid exceeding any of the specified parameters.
   • Measure turn-on and turn-off times under the conditions specified in the parameter table.

(For reference only)