Details
BUY 34NM60ND https://www.utsource.net/itm/p/12605142.html
| Parameter | Value | Unit |
|---|---|---|
| Part Number | 34NM60ND | |
| Description | N-Channel MOSFET | |
| Package Type | D2PAK (TO-263) | |
| Drain-Source Voltage | 60 | V |
| Gate-Source Voltage | 卤20 | V |
| Continuous Drain Current | 34 | A |
| Pulse Drain Current | 98 | A |
| Power Dissipation | 105 | W |
| Total Gate Charge | 77 | nC |
| Input Capacitance | 1640 | pF |
| Output Capacitance | 440 | pF |
| Turn-on Delay Time | 38 | ns |
| Rise Time | 16 | ns |
| Turn-off Delay Time | 18 | ns |
| Fall Time | 47 | ns |
Instructions for Use:
- Handling: The 34NM60ND is sensitive to electrostatic discharge (ESD). Handle with care using ESD-safe procedures.
- Mounting: Ensure proper thermal management. Use heatsinks or heat spreaders if necessary, especially under high current or power dissipation conditions.
- Soldering: Follow recommended soldering profiles to avoid damage from excessive heat. Ensure good thermal and electrical connections.
- Biasing: Apply gate voltage within the specified limits to prevent gate oxide breakdown.
- Operation: Operate within the continuous drain current and power dissipation limits to ensure reliable performance.
- Storage: Store in a dry environment and follow recommended storage practices to maintain component integrity.
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