34NM60ND

34NM60ND


Specifications
Details

BUY 34NM60ND https://www.utsource.net/itm/p/12605142.html

Parameter Value Unit
Part Number 34NM60ND
Description N-Channel MOSFET
Package Type D2PAK (TO-263)
Drain-Source Voltage 60 V
Gate-Source Voltage 卤20 V
Continuous Drain Current 34 A
Pulse Drain Current 98 A
Power Dissipation 105 W
Total Gate Charge 77 nC
Input Capacitance 1640 pF
Output Capacitance 440 pF
Turn-on Delay Time 38 ns
Rise Time 16 ns
Turn-off Delay Time 18 ns
Fall Time 47 ns

Instructions for Use:

  1. Handling: The 34NM60ND is sensitive to electrostatic discharge (ESD). Handle with care using ESD-safe procedures.
  2. Mounting: Ensure proper thermal management. Use heatsinks or heat spreaders if necessary, especially under high current or power dissipation conditions.
  3. Soldering: Follow recommended soldering profiles to avoid damage from excessive heat. Ensure good thermal and electrical connections.
  4. Biasing: Apply gate voltage within the specified limits to prevent gate oxide breakdown.
  5. Operation: Operate within the continuous drain current and power dissipation limits to ensure reliable performance.
  6. Storage: Store in a dry environment and follow recommended storage practices to maintain component integrity.
(For reference only)

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