Details
BUY SKIIP23NAB126V1 https://www.utsource.net/itm/p/12605148.html
| Parameter | Symbol | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Continuous Collector Current | IC | - | 1200 | - | A | At Tc = 25°C, pulse width ≤ 10 μs |
| Peak Collector Current | ICM | - | 1800 | - | A | At Tc = 25°C, pulse width ≤ 10 μs |
| Collector-Emitter Voltage | VCES | - | 1200 | - | V | At IC = 0, Tc = 25°C |
| Gate-Source Voltage | VGS(th) | 2.5 | 4.5 | 6.5 | V | Turn-on threshold voltage, IC = 10 A, Tc = 25°C |
| On-State Collector-Emitter Voltage | VCE(on) | - | 1.8 | - | V | At IC = 1200 A, VGS = 15 V, Tc = 25°C |
| Turn-On Delay Time | tD(on) | - | 0.2 | 0.5 | μs | At IC = 1200 A, VGS = 15 V, Tc = 25°C |
| Rise Time | tr | - | 0.5 | 1.0 | μs | At IC = 1200 A, VGS = 15 V, Tc = 25°C |
| Turn-Off Delay Time | tD(off) | - | 0.2 | 0.5 | μs | At IC = 1200 A, VGS = 15 V, Tc = 25°C |
| Fall Time | tf | - | 0.5 | 1.0 | μs | At IC = 1200 A, VGS = 15 V, Tc = 25°C |
| Total Switching Time | ts | - | 1.4 | 2.5 | μs | Sum of tD(on), tr, tD(off), tf |
| Junction to Case Thermal Resistance | Rth(j-c) | - | 0.01 | - | K/W | At IC = 1200 A, Tc = 25°C |
| Maximum Junction Temperature | TJ(max) | - | - | 175 | °C | Maximum allowable junction temperature |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C | Temperature range for storage and non-operating conditions |
Instructions for Use:
Mounting and Heat Sinking:
- Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Use thermal paste or thermal interface material between the device and the heat sink for optimal thermal performance.
Gate Drive:
- Apply a gate-source voltage (VGS) of at least 15 V to ensure reliable turn-on.
- Ensure that the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.
Current Limiting:
- Use appropriate current limiting techniques to prevent exceeding the maximum continuous collector current (IC) and peak collector current (ICM).
Thermal Management:
- Monitor the junction temperature (TJ) to avoid exceeding the maximum junction temperature (TJ(max)).
- Consider derating the current if operating at high ambient temperatures.
Storage and Handling:
- Store the device in a dry, cool environment within the specified storage temperature range (Tstg).
- Handle with care to avoid mechanical damage and electrostatic discharge (ESD).
Testing:
- When testing the device, use the specified test conditions to ensure accurate measurements.
- Avoid prolonged operation at the maximum ratings to prevent premature failure.
Safety Precautions:
- Always follow safety guidelines when handling high-voltage and high-current components.
- Use appropriate personal protective equipment (PPE) and work in a well-ventilated area.
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