SKIIP23NAB126V1

SKIIP23NAB126V1


Specifications
SKU
12605148
Details

BUY SKIIP23NAB126V1 https://www.utsource.net/itm/p/12605148.html

Parameter Symbol Min Typ Max Unit Notes
Continuous Collector Current IC - 1200 - A At Tc = 25°C, pulse width ≤ 10 μs
Peak Collector Current ICM - 1800 - A At Tc = 25°C, pulse width ≤ 10 μs
Collector-Emitter Voltage VCES - 1200 - V At IC = 0, Tc = 25°C
Gate-Source Voltage VGS(th) 2.5 4.5 6.5 V Turn-on threshold voltage, IC = 10 A, Tc = 25°C
On-State Collector-Emitter Voltage VCE(on) - 1.8 - V At IC = 1200 A, VGS = 15 V, Tc = 25°C
Turn-On Delay Time tD(on) - 0.2 0.5 μs At IC = 1200 A, VGS = 15 V, Tc = 25°C
Rise Time tr - 0.5 1.0 μs At IC = 1200 A, VGS = 15 V, Tc = 25°C
Turn-Off Delay Time tD(off) - 0.2 0.5 μs At IC = 1200 A, VGS = 15 V, Tc = 25°C
Fall Time tf - 0.5 1.0 μs At IC = 1200 A, VGS = 15 V, Tc = 25°C
Total Switching Time ts - 1.4 2.5 μs Sum of tD(on), tr, tD(off), tf
Junction to Case Thermal Resistance Rth(j-c) - 0.01 - K/W At IC = 1200 A, Tc = 25°C
Maximum Junction Temperature TJ(max) - - 175 °C Maximum allowable junction temperature
Storage Temperature Range Tstg -55 - 150 °C Temperature range for storage and non-operating conditions

Instructions for Use:

  1. Mounting and Heat Sinking:

    • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
    • Use thermal paste or thermal interface material between the device and the heat sink for optimal thermal performance.
  2. Gate Drive:

    • Apply a gate-source voltage (VGS) of at least 15 V to ensure reliable turn-on.
    • Ensure that the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.
  3. Current Limiting:

    • Use appropriate current limiting techniques to prevent exceeding the maximum continuous collector current (IC) and peak collector current (ICM).
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to avoid exceeding the maximum junction temperature (TJ(max)).
    • Consider derating the current if operating at high ambient temperatures.
  5. Storage and Handling:

    • Store the device in a dry, cool environment within the specified storage temperature range (Tstg).
    • Handle with care to avoid mechanical damage and electrostatic discharge (ESD).
  6. Testing:

    • When testing the device, use the specified test conditions to ensure accurate measurements.
    • Avoid prolonged operation at the maximum ratings to prevent premature failure.
  7. Safety Precautions:

    • Always follow safety guidelines when handling high-voltage and high-current components.
    • Use appropriate personal protective equipment (PPE) and work in a well-ventilated area.
(For reference only)

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