Details

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BUY IRAM535-1065AS https://www.utsource.net/itm/p/12605232.html

Parameter	Description	Value
Part Number	Component Identifier	IRAM535-1065AS
Type	Component Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Package	Encapsulation Type	TO-220
VDS (Max)	Drain-to-Source Voltage	535 V
VGS (Max)	Gate-to-Source Voltage	卤20 V
ID (Max)	Continuous Drain Current	10 A
RDS(on) (Max)	On-State Resistance at VGS = 10 V	0.65 惟
Power Dissipation (Max)	Maximum Power Dissipation	106 W
Operating Temperature Range	Junction Temperature	-55掳C to +150掳C
Storage Temperature Range	Storage Temperature	-65掳C to +150掳C
Thermal Resistance (Junction to Case)	R胃JC	1.5 K/W
Thermal Resistance (Junction to Ambient)	R胃JA	62 K/W
Gate Charge	Qg	140 nC
Input Capacitance	Ciss	2000 pF
Output Capacitance	Coss	300 pF
Reverse Transfer Capacitance	Crss	250 pF

Instructions for Use:

1. Handling Precautions:

   • ESD Protection: The device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling.
   • Mounting: Ensure that the device is mounted on a heatsink if operating near maximum power dissipation to prevent overheating.

2. Circuit Design:

   • Gate Drive: Apply a gate voltage (VGS) within the specified range to control the MOSFET. Ensure that the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.
   • Heat Management: If the device is expected to dissipate significant power, ensure adequate heat sinking to maintain the junction temperature within safe limits.

3. Storage:

   • Temperature: Store the device in a dry environment within the specified storage temperature range.
   • Humidity: Avoid exposure to high humidity levels to prevent corrosion or damage.

4. Testing:

   • Initial Testing: Before integrating the MOSFET into a circuit, perform initial testing to verify its parameters and functionality.
   • Parameter Verification: Measure key parameters such as VDS, ID, and RDS(on) to ensure they meet the specifications.

5. Safety:

   • Overvoltage Protection: Implement overvoltage protection circuits to prevent damage from voltage spikes.
   • Overcurrent Protection: Use current limiting techniques to protect the MOSFET from excessive current.

For detailed application notes and further technical information, refer to the datasheet provided by the manufacturer.

(For reference only)