Details

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BUY 6MBI150U4B-120-50 https://www.utsource.net/itm/p/12605354.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Blocking Voltage	V_RRMS	Repetitive Peak Reverse Voltage	-	-	1200	V
Rated Current	I_TAV	Average Thyristor Current	-	50	-	A
Surge Current (Non-repetitive)	I_SM	t = 10 ms, I2t = 8.33 A2s	-	600	-	A
Gate Trigger Current	I_GT	T_J = 25掳C	2	-	10	mA
Holding Current	I_H		5	-	15	mA
Turn-on Time	t_r		-	0.5	1.5	渭s
Turn-off Time	t_f		-	20	40	渭s
Junction Temperature	T_J	Operating	-40	-	125	掳C
Storage Temperature	T_STG		-40	-	125	掳C

Instructions for Use

1. Mounting and Handling:

   • Ensure the device is mounted in a way that allows adequate heat dissipation.
   • Handle with care to avoid damage to the sensitive components.

2. Voltage and Current Ratings:

   • Do not exceed the blocking voltage (V_RRMS) or rated current (I_TAV) as specified.
   • For surge conditions, ensure that the non-repetitive surge current (I_SM) does not exceed the specified limit for more than the allowed duration.

3. Gate Drive Requirements:

   • Ensure the gate trigger current (I_GT) is within the specified range to reliably turn on the device.
   • Maintain the holding current (I_H) above the minimum value to keep the device in the conducting state.

4. Timing Parameters:

   • Account for the turn-on time (t_r) and turn-off time (t_f) when designing circuits to avoid improper operation due to timing mismatches.

5. Temperature Considerations:

   • Operate the device within the specified junction temperature (T_J) and storage temperature (T_STG) ranges to ensure reliable performance and longevity.

6. Safety Precautions:

   • Always follow safety guidelines when handling high-voltage and high-current devices.
   • Use appropriate protective equipment and adhere to electrical safety standards.

(For reference only)