Details
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| Parameter | Description | Value |
|---|---|---|
| Device Type | Flash Memory | 1 Mbit (128K x 8) |
| Package | Plastic Fine Pitch Ball Grid Array (TFBGA) | 48-ball |
| Operating Voltage (Vcc) | Supply Voltage | 3.0V to 3.6V |
| Standby Current (Typical) | Power Consumption in Standby Mode | 1 渭A |
| Active Current (Typical) | Power Consumption in Active Mode | 25 mA |
| Access Time (tACC) | Typical Access Time | 55 ns |
| Page Size | For Read/Program Operations | 256 bytes |
| Sector Size | Erase Operation | 8 Kbytes |
| Block Size | Large Block Erase | 64 Kbytes |
| Chip Erase Time | Full Chip Erase Operation | 5 seconds |
| Programming Time | Byte/Word Program Operation | 40 渭s |
| Data Retention | Guaranteed Data Retention | 10 years |
| Endurance | Write/Erase Cycles | 100,000 cycles |
| Operating Temperature Range | Industrial Grade | -40掳C to +85掳C |
| Storage Temperature Range | Non-operating Conditions | -65掳C to +150掳C |
Instructions for Use:
- Power Supply: Ensure the device is powered within the specified voltage range of 3.0V to 3.6V.
- Initialization: Upon applying power, allow the device a brief stabilization period before initiating read/write operations.
- Programming: To program data into the memory, use the byte or word programming commands. Each operation should not exceed the typical programming time of 40 渭s.
- Erase Operations: Erasing can be done at sector (8 Kbytes), block (64 Kbytes), or chip level. A full chip erase takes approximately 5 seconds.
- Read Operations: Utilize page mode for efficient reading, which allows access to up to 256 bytes per read cycle.
- Standby Mode: When not actively reading from or writing to the memory, ensure the device enters standby mode to minimize power consumption.
- Temperature Considerations: Operate within the industrial temperature range (-40掳C to +85掳C) and store within the wider storage temperature range (-65掳C to +150掳C).
- Endurance Monitoring: Keep track of write/erase cycles to avoid exceeding the endurance limit of 100,000 cycles.
- Data Retention: For optimal data retention, operate within the recommended conditions and ensure the environment does not exceed the specified limits.
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