Details

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BUY IPA70R360P7S https://www.utsource.net/itm/p/12605927.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
On-State Resistance	RDS(on)	-	360	-	mΩ	@ VGS=10V, ID=25A
Gate Charge	QG	-	180	-	nC
Input Capacitance	Ciss	-	4500	-	pF	@ VDS=600V
Output Capacitance	Coss	-	480	-	pF	@ VDS=600V
Total Capacitance	Crss	-	95	-	pF	@ VDS=600V
Continuous Drain Current	ID	-	70	-	A	@ TC=25°C
Pulse Drain Current	ID puls	-	210	-	A	@ TC=25°C, tpuls=10μs
Maximum Drain-Source Voltage	VDS	-	700	-	V
Gate-Source Voltage	VGS	-10	0	20	V
Junction Temperature	TJ	-55	-	175	°C
Storage Temperature	Tstg	-55	-	150	°C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Handle with care to avoid damage to the leads and body.

2. Gate Drive:

   • Use a gate resistor to limit current and reduce ringing.
   • Ensure V_GS does not exceed the maximum ratings to prevent damage.

3. Thermal Management:

   • Monitor the junction temperature to avoid overheating.
   • Use thermal paste between the device and heatsink for better thermal conductivity.

4. Electrical Connections:

   • Ensure all connections are secure and free from corrosion.
   • Use appropriate wire gauges to handle the current levels.

5. Surge Protection:

   • Implement surge protection circuits to protect against voltage spikes and transients.

6. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.
   • Follow ESD (Electrostatic Discharge) precautions during handling and storage.

7. Testing:

   • Perform initial testing at reduced power levels to ensure proper operation.
   • Regularly inspect the device for signs of wear or damage.

By following these guidelines, you can ensure optimal performance and longevity of the IPA70R360P7S MOSFET.

(For reference only)