Details

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BUY 2SK2013 https://www.utsource.net/itm/p/12605937.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	V(DS)	-50	-	50	V
Gate-Source Voltage	V(GS)	-10	-	10	V
Drain Current	I(D)	-	5	10	A	V(DS) = 25V, V(GS) = 4V
Gate Current	I(G)	-	0.1	1	mA	V(GS) = 4V
Transconductance	g(m)	1.5	-	3	S	V(DS) = 25V, V(GS) = 4V
Input Capacitance	Ciss	-	180	-	pF	f = 1 MHz
Output Capacitance	Coss	-	60	-	pF	f = 1 MHz
Reverse Transfer Capacitance	Crss	-	30	-	pF	f = 1 MHz
Threshold Voltage	Vth	1.5	2.5	3.5	V	I(D) = 1 mA, V(DS) = 10V
Power Dissipation	P(T)	-	-	125	W	Tc = 25掳C
Junction Temperature	Tj	-	-	175	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings to prevent damage.
   • Use appropriate ESD protection when handling the device.

2. Mounting:

   • Ensure proper thermal management to keep the junction temperature within the specified range.
   • Use a heatsink if necessary, especially for high power applications.

3. Biasing:

   • Apply the gate-source voltage (V(GS)) carefully to avoid exceeding the threshold voltage (Vth).
   • Ensure the drain-source voltage (V(DS)) is within the safe operating area.

4. Testing:

   • Use a constant current source to measure the drain current (I(D)) accurately.
   • Measure the transconductance (g(m)) under the specified conditions to ensure the device is functioning correctly.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight.
   • Follow the recommended storage temperature range to avoid degradation.

6. Application Notes:

   • The 2SK2013 is suitable for high-frequency and high-power applications.
   • It can be used in switching circuits, amplifiers, and other electronic systems requiring high performance.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)