Details

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BUY 2SA2022 https://www.utsource.net/itm/p/12605942.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	60	V
Collector-Base Voltage	VCBO	-	-	70	V
Emitter-Base Voltage	VEBO	-	-	5	V
Collector Current	IC	-	-	15	A
Base Current	IB	-	-	3	A
Power Dissipation	PT	-	-	130	W
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use recommended mounting torque to avoid mechanical stress.

2. Biasing:

   • Ensure base current (I_B) is sufficient to fully turn on the transistor.
   • Avoid excessive base current to prevent damage.

3. Operation:

   • Do not exceed the maximum ratings for collector-emitter voltage (V_CEO), collector-base voltage (V_CBO), and emitter-base voltage (V_EBO).
   • Keep power dissipation (P_T) below the maximum limit by using appropriate heat sinks or cooling methods.

4. Storage:

   • Store in a dry, cool place within the storage temperature range (-55掳C to 150掳C).

5. Handling:

   • Handle with care to avoid physical damage.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

(For reference only)