Details

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BUY 2SA1302 https://www.utsource.net/itm/p/12605945.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	600	V
Collector-Base Voltage	VCBO	500	V
Emitter-Base Voltage	VEBO	7	V
Continuous Collector Current	Ic	15	A
Collector Power Dissipation	Ptot	180	W
Junction Temperature	Tj	-55 to +150	掳C
Storage Temperature	Tstg	-55 to +150	掳C
Transition Frequency	ft	40	MHz
DC Current Gain (Min)	hFE	20	-
DC Current Gain (Max)	hFE	100	-

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within the specified range.
   • Use a suitable mounting method to ensure good thermal contact with the heat sink.

2. Biasing:

   • Apply base current (Ib) carefully to avoid exceeding the maximum collector current (Ic).
   • Ensure that the base-emitter voltage (Vbe) does not exceed the maximum rated value.

3. Operation:

   • Do not exceed the maximum collector-emitter voltage (VCEO) or collector power dissipation (Ptot).
   • Operate within the specified temperature range to prevent damage to the device.

4. Storage:

   • Store in a dry, cool place to avoid moisture and temperature-related damage.
   • Handle with care to prevent mechanical stress or damage to the leads.

5. Testing:

   • Use appropriate test equipment to measure parameters such as hFE, Vbe, and Ic.
   • Ensure that the test conditions do not exceed the maximum ratings of the transistor.

6. Safety:

   • Always follow safety guidelines when handling high-voltage and high-power components.
   • Use protective equipment such as gloves and goggles when necessary.

(For reference only)