Details

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BUY 2SB755 https://www.utsource.net/itm/p/12605954.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 0.1 mA, IB = 0	-	-	40	V
Emitter-Base Voltage	VEBO	IE = 10 mA, VC = 0	-	-	5	V
Collector Current	IC	VCE = 5 V, hFE = 100	-	150	-	mA
Base Current	IB	VBE = 0.7 V, VCE = 5 V	-	1.5	-	mA
DC Current Gain	hFE	IC = 50 mA, VCE = 5 V	100	300	-	-
Transition Frequency	fT	IC = 10 mA, VCE = 5 V	-	200	-	MHz
Storage Temperature Range	TSTG	-	-40	-	150	掳C
Operating Temperature Range	TOP	-	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure that the 2SB755 is mounted on a suitable heat sink if it will be operating at high power levels.
   • Use proper mounting hardware to secure the transistor and ensure good thermal contact.

2. Biasing:

   • Bias the base-emitter junction with a voltage of approximately 0.7 V for optimal operation.
   • Ensure that the base current (I_B) is within the specified range to avoid damage to the transistor.

3. Current Limiting:

   • Use appropriate current-limiting resistors to prevent the collector current (I_C) from exceeding the maximum rating of 150 mA.

4. Temperature Considerations:

   • Operate the transistor within the specified temperature ranges to ensure reliable performance and longevity.
   • Monitor the temperature during operation and use cooling solutions if necessary.

5. Storage:

   • Store the 2SB755 in a dry, cool place away from direct sunlight and sources of heat.
   • Handle the transistor with care to avoid static discharge and physical damage.

6. Testing:

   • When testing the 2SB755, use a multimeter or a transistor tester to verify the parameters such as V_CEO, V_EBO, and h_FE.
   • Follow the test conditions specified in the parameter table for accurate results.

(For reference only)