Details

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BUY TF8N80 https://www.utsource.net/itm/p/12605974.html

Parameter	Symbol	Min	Typical	Max	Unit	Description
Drain-Source Voltage	VDS	-	800	-	V	Maximum voltage between drain and source with the gate open.
Gate-Source Voltage	VGS	-20	-	20	V	Maximum voltage between gate and source.
Continuous Drain Current	ID	-	8.0	-	A	Continuous current flowing from drain to source.
Pulse Drain Current	ID(peak)	-	32.0	-	A	Peak pulse current flowing from drain to source (tp = 10 渭s, duty cycle = 1%).
Total Power Dissipation	PTOT	-	150	-	W	Maximum power dissipation at TC = 25掳C.
Junction Temperature	TJ	-	-	175	掳C	Maximum junction temperature.
Storage Temperature Range	TSTG	-55	-	150	掳C	Temperature range for storage and operation.
Thermal Resistance, Junction to Case	R胃JC	-	1.5	-	掳C/W	Thermal resistance from junction to case.
Input Capacitance	Ciss	-	1650	-	pF	Input capacitance at VDS = 400V, VGS = 0V, f = 1 MHz.
Output Capacitance	Coss	-	490	-	pF	Output capacitance at VDS = 400V, VGS = 0V, f = 1 MHz.
Reverse Transfer Capacitance	Crss	-	130	-	pF	Reverse transfer capacitance at VDS = 400V, VGS = 0V, f = 1 MHz.
Turn-On Delay Time	td(on)	-	40	-	ns	Time from 10% of VGS to 10% of ID.
Rise Time	tr	-	60	-	ns	Time from 10% to 90% of ID.
Turn-Off Delay Time	td(off)	-	40	-	ns	Time from 90% of VGS to 90% of ID.
Fall Time	tf	-	60	-	ns	Time from 90% to 10% of ID.

Instructions for Use:

1. Handling Precautions:

   • Handle the TF8N80 with care to avoid damage to the device.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure proper thermal management by using a heatsink if necessary.
   • Follow the recommended PCB layout guidelines to minimize parasitic inductances and ensure good thermal performance.

3. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified limits to avoid damaging the device.
   • Use appropriate gate drive circuits to ensure fast and reliable switching.

4. Operating Conditions:

   • Do not exceed the maximum ratings for V_DS, I_D, and T_J.
   • Monitor the junction temperature to ensure it remains within safe operating limits.

5. Testing:

   • Use the specified test conditions for accurate parameter measurements.
   • Refer to the datasheet for detailed test circuits and procedures.

6. Storage:

   • Store the device in a dry, cool environment within the specified storage temperature range.
   • Avoid exposure to high humidity and corrosive environments.

7. Applications:

   • The TF8N80 is suitable for a wide range of high-voltage, high-current applications such as power supplies, motor control, and industrial electronics.

(For reference only)