Details

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BUY GP50B60PD1 https://www.utsource.net/itm/p/12605989.html

Parameter	Description	Value	Unit
Part Number	Device Identifier	GP50B60PD1	-
Type	Device Classification	MOSFET	-
Configuration	Channel Type	N-Channel	-
VDS (Drain-Source Voltage)	Maximum voltage between drain and source	600	V
RDS(on) (On-Resistance)	Resistance when fully on at specified conditions	50	m惟
ID (Continuous Drain Current)	Continuous current through the drain	38.7	A
PD (Power Dissipation)	Maximum power dissipation at Tc=25掳C	149	W
Junction Temperature	Maximum operating temperature of the junction	175	掳C
Package	Encapsulation type	TO-247-3	-
Gate Charge	Charge required to switch the device	66	nC
Input Capacitance	Capacitance between gate and source	1350	pF
Total Gate Charge	Total charge required to switch the device	66	nC

Instructions for Use:

1. Installation:

   • Ensure that the device is installed in a well-ventilated area to facilitate heat dissipation.
   • Use appropriate heatsinks if necessary, especially under high-power conditions.

2. Handling:

   • Handle with care to avoid damage to the leads and body.
   • Follow proper ESD (Electrostatic Discharge) precautions to prevent damage.

3. Operating Conditions:

   • Do not exceed the maximum ratings provided in the table.
   • Operate within the specified temperature range to ensure reliable performance.

4. Testing:

   • Verify all connections are secure before applying power.
   • Test the device under controlled conditions initially to ensure correct operation.

5. Storage:

   • Store in a dry environment to prevent corrosion or damage.
   • Keep away from direct sunlight and sources of heat.

6. Application:

   • Suitable for applications requiring high efficiency and low on-resistance.
   • Ideal for use in switching power supplies, motor control, and other high-power electronics.

(For reference only)