Details

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BUY TAN250A https://www.utsource.net/itm/p/12606005.html

Parameter	Description	Value
Part Number	Unique identifier for the component	TAN250A
Type	Category of the device	Power Transistor
Package	Encapsulation type	TO-220
Maximum Collector-Emitter Voltage (Vce)	Max voltage between collector and emitter	700 V
Maximum Collector Current (Ic)	Max current through the collector	16 A
Maximum Power Dissipation (Ptot)	Total power dissipation	130 W
Junction Temperature (Tj)	Operating temperature range for the junction	-55掳C to +150掳C
Storage Temperature (Tstg)	Temperature range for storage	-55掳C to +150掳C
Transition Frequency (ft)	Frequency at which current gain drops to unity	4 MHz
Continuous Collector Current (Icm)	Max continuous collector current	16 A
Peak Pulse Collector Current (Icm(p))	Max peak pulse collector current	200 A

Instructions for Use:

1. Mounting: Ensure proper heat sinking to manage the junction temperature within operational limits.
2. Wiring: Connect the transistor carefully ensuring correct polarity and secure connections to avoid short circuits.
3. Operation: Operate within specified voltage and current ratings to prevent damage or premature failure.
4. Storage: Store in a dry, cool place within the specified storage temperature range to maintain performance characteristics.
5. Handling: Handle with care to avoid physical damage to the package and leads. Use appropriate ESD protection measures.

(For reference only)