Details

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BUY IRFW644B(1PCS) https://www.utsource.net/itm/p/12606037.html

Parameter	Value	Unit
Device Type	MOSFET	-
Package	TO-252 (DPAK)	-
Maximum Drain Current (Id)	31.5	A
Maximum Gate-Source Voltage (Vgs)	卤20	V
Maximum Drain-Source Voltage (Vds)	60	V
Rds(on) at Vgs=10V	7.5	m惟
Power Dissipation (Ptot)	2.4	W
Junction Temperature (Tj)	-55 to +175	掳C
Storage Temperature (Tstg)	-55 to +150	掳C

Instructions for IRFW644B(1PCS):

1. Handling and Storage:

   • Store the device in a dry, cool place away from direct sunlight.
   • Handle with care to avoid damage to the leads or body.

2. Mounting:

   • Ensure that the mounting surface is clean and flat.
   • Use appropriate heat sinks if necessary to manage thermal performance.

3. Electrical Connections:

   • Verify all connections are correct before applying power.
   • Ensure proper isolation between high voltage lines and low voltage control circuits.

4. Operating Conditions:

   • Do not exceed the maximum ratings listed in the parameter table.
   • Operate within the specified temperature range to ensure reliability.

5. Testing:

   • Before installation, perform initial tests to confirm functionality.
   • Regularly check the device parameters during operation to ensure they remain within acceptable limits.

6. Safety Precautions:

   • Always disconnect power before making any adjustments or repairs.
   • Follow all safety guidelines provided by the manufacturer to prevent injury or damage.

(For reference only)