Details

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BUY ILQ55 https://www.utsource.net/itm/p/12606039.html

Parameter	Description	Value
Part Number		ILQ55
Type		Phototransistor
Package Type		DIP-4
Emission Color		Infrared
Wavelength		940 nm
Collector-Emitter Voltage (VCE)	Maximum Collector-Emitter Voltage	30 V
Collector Current (IC)	Maximum Collector Current	50 mA
Emitter-Base Voltage (VEB)	Maximum Emitter-Base Voltage	5 V
Power Dissipation (PT)	Maximum Power Dissipation	100 mW
Storage Temperature Range	Operating Temperature Range	-40掳C to +85掳C
Operating Temperature Range	Storage Temperature Range	-40掳C to +85掳C
Rise Time (tr)	Typical Rise Time	10 渭s
Fall Time (tf)	Typical Fall Time	12 渭s
Sensitivity	Typical Sensitivity at 940 nm	0.5 A/W

Instructions for Use:

1. Mounting: Ensure the device is mounted on a PCB with proper clearance to avoid short circuits.
2. Polarity: Connect the collector and emitter correctly. The collector is typically the longer lead.
3. Voltage and Current Limits: Do not exceed the maximum ratings for collector-emitter voltage, collector current, and power dissipation.
4. Temperature: Operate within the specified temperature range to ensure reliable performance.
5. Optical Alignment: For optimal performance, align the phototransistor with the light source accurately.
6. Handling: Handle the device with care to avoid damage to the leads or the package.
7. Storage: Store the device in a dry, cool place to prevent moisture damage.

(For reference only)