Details
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| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 600 | - | V | |
| Gate-Source Voltage | VGS | -15 | 0 | 20 | V | |
| Continuous Drain Current | ID (DC) | - | 4.9 | - | A | TC = 25掳C, VGS = 10V |
| Pulse Drain Current | ID (Pulse) | - | 14 | - | A | tp = 10 ms, TC = 25掳C, VGS = 10V |
| Power Dissipation | Ptot | - | - | 125 | W | TC = 25掳C |
| Junction Temperature | TJ | - | - | 150 | 掳C | |
| Storage Temperature Range | TSTG | -55 | - | 150 | 掳C | |
| Gate Charge | QG | - | 55 | - | nC | VGS = 15V, ID = 4.9A |
| Input Capacitance | Ciss | - | 1800 | - | pF | VDS = 400V, f = 1 MHz |
| Output Capacitance | Coss | - | 360 | - | pF | VDS = 400V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 180 | - | pF | VDS = 400V, f = 1 MHz |
| On-State Resistance | RDS(on) | - | 0.65 | - | 惟 | VGS = 10V, ID = 4.9A, TC = 25掳C |
| Turn-On Delay Time | td(on) | - | 25 | - | ns | VDS = 400V, ID = 4.9A, VGS = 15V, Rg = 2惟 |
| Rise Time | tr | - | 35 | - | ns | VDS = 400V, ID = 4.9A, VGS = 15V, Rg = 2惟 |
| Turn-Off Delay Time | td(off) | - | 15 | - | ns | VDS = 400V, ID = 4.9A, VGS = 15V, Rg = 2惟 |
| Fall Time | tf | - | 25 | - | ns | VDS = 400V, ID = 4.9A, VGS = 15V, Rg = 2惟 |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to manage power dissipation.
- Handle with care to avoid static damage.
Biasing:
- Apply gate-source voltage (VGS) within the specified range (-15V to +20V).
- Ensure that the drain-source voltage (VDS) does not exceed 600V.
Current Limitation:
- Do not exceed the continuous drain current (ID) of 4.9A at 25掳C case temperature.
- For pulse applications, do not exceed 14A with a pulse width of 10ms.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed 150掳C.
- Use appropriate cooling methods to maintain the device within safe operating temperatures.
Capacitance Considerations:
- Account for input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in high-frequency applications.
Switching Characteristics:
- Optimize gate resistance (Rg) to balance switching speed and EMI.
- Use the provided turn-on and turn-off delay times and rise/fall times for timing calculations.
Storage:
- Store the device in a dry, cool place within the storage temperature range (-55掳C to 150掳C).
Testing:
- Perform initial testing under controlled conditions to verify performance and reliability.
- Follow recommended test procedures to ensure accurate measurements.
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