IRF7304TRPBF

IRF7304TRPBF


Specifications
SKU
12606051
Details

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Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDS - 600 - V
Gate-Source Voltage VGS -15 0 20 V
Continuous Drain Current ID (DC) - 4.9 - A TC = 25掳C, VGS = 10V
Pulse Drain Current ID (Pulse) - 14 - A tp = 10 ms, TC = 25掳C, VGS = 10V
Power Dissipation Ptot - - 125 W TC = 25掳C
Junction Temperature TJ - - 150 掳C
Storage Temperature Range TSTG -55 - 150 掳C
Gate Charge QG - 55 - nC VGS = 15V, ID = 4.9A
Input Capacitance Ciss - 1800 - pF VDS = 400V, f = 1 MHz
Output Capacitance Coss - 360 - pF VDS = 400V, f = 1 MHz
Reverse Transfer Capacitance Crss - 180 - pF VDS = 400V, f = 1 MHz
On-State Resistance RDS(on) - 0.65 - VGS = 10V, ID = 4.9A, TC = 25掳C
Turn-On Delay Time td(on) - 25 - ns VDS = 400V, ID = 4.9A, VGS = 15V, Rg = 2惟
Rise Time tr - 35 - ns VDS = 400V, ID = 4.9A, VGS = 15V, Rg = 2惟
Turn-Off Delay Time td(off) - 15 - ns VDS = 400V, ID = 4.9A, VGS = 15V, Rg = 2惟
Fall Time tf - 25 - ns VDS = 400V, ID = 4.9A, VGS = 15V, Rg = 2惟

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage power dissipation.
    • Handle with care to avoid static damage.
  2. Biasing:

    • Apply gate-source voltage (VGS) within the specified range (-15V to +20V).
    • Ensure that the drain-source voltage (VDS) does not exceed 600V.
  3. Current Limitation:

    • Do not exceed the continuous drain current (ID) of 4.9A at 25掳C case temperature.
    • For pulse applications, do not exceed 14A with a pulse width of 10ms.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed 150掳C.
    • Use appropriate cooling methods to maintain the device within safe operating temperatures.
  5. Capacitance Considerations:

    • Account for input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in high-frequency applications.
  6. Switching Characteristics:

    • Optimize gate resistance (Rg) to balance switching speed and EMI.
    • Use the provided turn-on and turn-off delay times and rise/fall times for timing calculations.
  7. Storage:

    • Store the device in a dry, cool place within the storage temperature range (-55掳C to 150掳C).
  8. Testing:

    • Perform initial testing under controlled conditions to verify performance and reliability.
    • Follow recommended test procedures to ensure accurate measurements.
(For reference only)

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