Details

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BUY SST39SF040-70-4C-PH https://www.utsource.net/itm/p/12606053.html

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Supply Voltage	Vcc	2.7		3.6	V
Standby Current	Istby		10		渭A	Vcc = 3.0V, Ta = 25掳C
Active Current (Read)	Iread		10	20	mA	Vcc = 3.0V, Ta = 25掳C, 5VCC/50MHz
Write Enable Pin Input Low	IWE	-1		-20	渭A	Vcc = 3.0V, Ta = 25掳C
Output High Level	VOH	2.4		Vcc	V	Vcc = 3.0V, Io = -1mA, Ta = 25掳C
Output Low Level	VOL	0		0.4	V	Vcc = 3.0V, Io = 1mA, Ta = 25掳C
Access Time	tACC	70			ns	Vcc = 3.0V, Ta = 25掳C, 5VCC/50MHz
Write Cycle Time	tWC	5		10	ms	Vcc = 3.0V, Ta = 25掳C, Typical: 8ms
Block Erase Time	tBERS	300		500	ms	Vcc = 3.0V, Ta = 25掳C, Typical: 400ms
Chip Erase Time	tCHERS	2		8	s	Vcc = 3.0V, Ta = 25掳C, Typical: 4s
Data Retention					>10 years	Vcc = 3.0V, Ta = 25掳C
Operating Temperature	Ta	-40		85	掳C
Storage Temperature	Tstg	-65		150	掳C

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the range of 2.7V to 3.6V.
   • The device has a low standby current of 10渭A at 3.0V.

2. Current Consumption:

   • During active read operations, the current consumption can be up to 20mA.
   • The write enable pin (WE) should have a low input current of -1渭A to -20渭A.

3. Output Levels:

   • The output high level (VOH) should be at least 2.4V when the output current is -1mA.
   • The output low level (VOL) should not exceed 0.4V when the output current is 1mA.

4. Timing Parameters:

   • The access time (tACC) is 70ns under typical conditions.
   • The write cycle time (tWC) is typically 8ms but can range from 5ms to 10ms.
   • The block erase time (tBERS) is typically 400ms but can range from 300ms to 500ms.
   • The chip erase time (tCHERS) is typically 4 seconds but can range from 2 seconds to 8 seconds.

5. Data Retention:

   • The device guarantees data retention for more than 10 years at 25掳C and 3.0V.

6. Temperature Ranges:

   • The operating temperature (Ta) ranges from -40掳C to 85掳C.
   • The storage temperature (Tstg) ranges from -65掳C to 150掳C.

7. Handling and Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Handle with care to avoid static discharge, which can damage the device.

8. Programming and Erasing:

   • Follow the specific programming and erasing sequences provided in the device datasheet to ensure reliable operation.
   • Use appropriate programming voltages and timings to avoid data corruption or device failure.

9. Testing:

   • Perform functional tests at the specified operating conditions to verify correct operation.
   • Use recommended test procedures and equipment to ensure accurate results.

10. Compliance:

    • Ensure that the device complies with all relevant safety and regulatory standards for your application.

(For reference only)