Details

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BUY IR20153S https://www.utsource.net/itm/p/12606080.html

Parameter	Symbol	Min	Typical	Max	Unit
Supply Voltage	VCC	4.5	-	20	V
Gate Drive Voltage	VGS	-18	-	18	V
Continuous Drain Current	ID	-	-	3.5	A
Peak Drain Current	IDpeak	-	-	7	A
Drain-Source Breakdown Voltage	V(DSS)	-	-	600	V
Gate Threshold Voltage	VGS(th)	2.0	3.0	4.0	V
On-State Resistance	RDS(on)	-	0.55	-	惟
Total Power Dissipation	PTOT	-	-	115	W
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Supply Voltage (V_CC):

   • Ensure the supply voltage is within the range of 4.5V to 20V to avoid damage to the device.

2. Gate Drive Voltage (V_GS):

   • The gate drive voltage should be between -18V and 18V. Exceeding these limits can cause the device to fail.

3. Continuous Drain Current (I_D):

   • The continuous drain current should not exceed 3.5A to prevent overheating and potential damage.

4. Peak Drain Current (I_Dpeak):

   • The peak drain current should not exceed 7A. This is a short-duration maximum and should not be sustained.

5. Drain-Source Breakdown Voltage (V_(DSS)):

   • The device can withstand a maximum drain-source voltage of 600V. Ensure that the applied voltage does not exceed this limit.

6. Gate Threshold Voltage (V_GS(th)):

   • The gate threshold voltage ranges from 2.0V to 4.0V. The device will start conducting when the gate-to-source voltage exceeds this range.

7. On-State Resistance (R_DS(on)):

   • The on-state resistance is typically 0.55惟. This value can affect power dissipation and should be considered in circuit design.

8. Total Power Dissipation (P_TOT):

   • The total power dissipation should not exceed 115W. Proper heat sinking may be required to manage heat dissipation.

9. Junction Temperature (T_J):

   • The junction temperature should be kept between -55掳C and 150掳C. Exceeding these limits can lead to device failure.

10. Storage Temperature (T_STG):

    • The device can be stored at temperatures ranging from -55掳C to 150掳C without damage.

Additional Notes:

• Always ensure proper heat management, especially in high-power applications.
• Use appropriate gate drive circuits to ensure reliable operation.
• Follow recommended PCB layout guidelines to minimize parasitic effects and improve performance.

(For reference only)