Details

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BUY M12L2561616A-5TG2S https://www.utsource.net/itm/p/12606090.html

Parameter	Description	Value
Product Name	M12L2561616A-5TG2S	-
Type	Synchronous DRAM (SDRAM)	-
Density	256 Mbit	-
Organization	16M x 16	-
Voltage (Vcc)	Supply Voltage	3.3V 卤 0.3V
Voltage (Vccq)	I/O Supply Voltage	3.3V 卤 0.3V
Operating Temperature	Industrial Temperature Range	-40掳C to +85掳C
Package	FBGA (Fine Pitch Ball Grid Array)	52 Pin
Data Rate	Data Transfer Rate	100 MHz
Access Time	CAS Latency	3 (CL=3)
Row Address Strobes	RAS# to CAS# Delay (tRCD)	3 cycles
Row Precharge Time	Active to Precharge Delay (tRP)	3 cycles
Refresh Cycle Time	Refresh Cycle Time (tREF)	64 ms
Power Consumption	Active Power	1.5W
Standby Power	Standby Power	0.5W
Write Recovery Time	Write Recovery Time (tWR)	3 cycles
Cycle Time	Minimum Cycle Time (tRC)	7.5 ns
Data Output Enable	Data Output Enable (tOE)	1.5 ns
Data Output Disable	Data Output Disable (tOH)	1.5 ns

Instructions for Use:

1. Power Supply:

   • Ensure that the Vcc and Vccq voltages are within the specified range (3.3V 卤 0.3V).
   • Use decoupling capacitors close to the power supply pins to minimize noise.

2. Signal Integrity:

   • Use controlled impedance traces for all high-speed signals.
   • Terminate differential pairs and clock lines as recommended by the datasheet.

3. Initialization:

   • Perform a reset sequence before accessing the memory.
   • Set up the mode register according to the desired operating parameters.

4. Timing Parameters:

   • Adhere to the specified timing parameters to ensure reliable operation.
   • Use appropriate delays and wait states for read and write operations.

5. Refresh:

   • Implement a refresh cycle every 64 ms to prevent data loss.
   • Ensure that the refresh command is issued even during standby or low-power modes.

6. Thermal Management:

   • Provide adequate cooling if operating at high frequencies or in high ambient temperatures.
   • Use heat sinks or thermal vias if necessary to dissipate heat.

7. Storage and Handling:

   • Store the device in a dry, static-free environment.
   • Handle with care to avoid damage to the pins and package.

8. Testing:

   • Use a memory tester or a custom test setup to verify the functionality of the device.
   • Test under various conditions to ensure robust performance.

9. Documentation:

   • Refer to the detailed datasheet and application notes for additional information and specific use cases.

10. Compliance:

    • Ensure compliance with relevant standards and regulations for your application.

(For reference only)