Details

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BUY AM29F800BB-70SE https://www.utsource.net/itm/p/12606106.html

Parameter	Description	Value	Unit
Device Type	Flash Memory	1 M x 8	-
Technology	CMOS	-	-
Package	Plastic Quad Flat Pack (PQFP)	48-pin	-
Operating Voltage (Vcc)	Supply Voltage	3.3V	V
Standby Current (Vcc = 3.3V)	Power Consumption in Standby Mode	10	渭A
Active Current (Vcc = 3.3V, 55 MHz)	Power Consumption in Active Mode	150	mA
Access Time (tACC)	Time from Address Valid to Data Valid	70	ns
Page Size	Number of Bytes in a Page	256	bytes
Block Size	Number of Bytes in a Block	64K	bytes
Sector Size	Number of Bytes in a Sector	8K	bytes
Programming Time (tPROG)	Time to Program a Byte	300	渭s
Erase Time (tERS)	Time to Erase a Block	2000	ms
Endurance	Number of Write/Erase Cycles per Block	100,000	cycles
Data Retention	Minimum Guaranteed Data Retention Time	10	years
Operating Temperature Range	Temperature Range for Normal Operation	-40 to +85	掳C
Storage Temperature Range	Temperature Range for Storage	-65 to +150	掳C

Instructions:

1. Power Supply:

   • Connect the Vcc pin to a 3.3V supply.
   • Connect the Vss pin to ground.

2. Addressing:

   • Provide the address to the A0-A19 pins to select the desired memory location.

3. Data I/O:

   • Data is read from or written to the D0-D7 pins.

4. Control Signals:

   • Chip Select (CS#): Low to enable the device.
   • Output Enable (OE#): Low to enable data output.
   • Write Enable (WE#): Low to initiate a write operation.
   • Write Protect (WP#): High to allow writes, low to prevent writes.
   • Reset (RESET#): Low to reset the device.

5. Programming:

   • To program a byte, set the address and data, then assert WE# and CS# low.
   • The programming time is 300 渭s.

6. Erasing:

   • To erase a block, set the block address, then assert the appropriate control signals.
   • The erase time is 2000 ms.

7. Read Operation:

   • Set the address, assert CS# and OE# low, and read the data from the D0-D7 pins.

8. Standby Mode:

   • To enter standby mode, deassert CS# (set high).

9. Temperature Considerations:

   • Ensure the operating temperature is within -40掳C to +85掳C for reliable performance.
   • Store the device within -65掳C to +150掳C.

10. Endurance and Data Retention:

    • The device can withstand up to 100,000 write/erase cycles per block.
    • Data retention is guaranteed for at least 10 years under normal operating conditions.

(For reference only)