Details
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| Parameter | Description | Value |
|---|---|---|
| Device | High-Speed CMOS 512K x 8-Bit Flash Memory | AN28F512 |
| Organization | Memory organization | 512K x 8 bits |
| Voltage Supply (Vcc) | Operating voltage range | 2.7V to 3.6V |
| Access Time | Maximum access time at Vcc = 3.0V, TA = 25°C | 70ns |
| Block Erase Time | Typical block erase time | 400ms |
| Chip Erase Time | Typical chip erase time | 5s |
| Write Cycle Time | Typical write cycle time | 200us |
| Endurance | Minimum number of program/erase cycles per sector | 100,000 cycles |
| Data Retention | Guaranteed data retention time | 10 years |
| Package Type | Types of packages available | TSOP-48, PQFP-48 |
| Operating Temperature | Industrial temperature range | -40°C to +85°C |
Instructions for Use:
Power Supply Requirements:
- Ensure the power supply voltage is within the specified range of 2.7V to 3.6V.
Programming:
- Use a standard flash memory programmer compatible with the JEDEC standard.
- Follow the manufacturer’s programming algorithm for reliable operation.
Erase Operations:
- Perform block or chip erase as needed. A block erase affects one block only, while a chip erase clears all blocks.
- Wait for the respective erase times before initiating new operations.
Write Operations:
- Each write cycle should be completed within 200 microseconds for optimal performance.
- Avoid exceeding the maximum number of program/erase cycles per sector to prevent wear-out.
Handling Precautions:
- Handle the device with care to avoid electrostatic discharge (ESD) damage.
- Store in recommended conditions to ensure long-term reliability and data retention.
Temperature Considerations:
- Operate within the industrial temperature range (-40°C to +85°C) for consistent performance.
Package Selection:
- Choose the appropriate package type based on board layout and design requirements. Options include TSOP-48 and PQFP-48.
For detailed programming algorithms and timing diagrams, refer to the datasheet provided by the manufacturer.
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