Details

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BUY 2SC931D https://www.utsource.net/itm/p/12606109.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Collector-Emitter Voltage	VCEO	-	-	400	V	IC = 500 mA, Tc = 25掳C
Emitter-Base Voltage	VEBO	-	-	6	V	IE = 50 mA, Tc = 25掳C
Collector-Emitter Saturation Voltage	VCE(sat)	-	1.2	-	V	IC = 500 mA, IB = 50 mA, Tc = 25掳C
Base-Emitter Saturation Voltage	VBE(sat)	-	1.8	-	V	IC = 500 mA, IB = 50 mA, Tc = 25掳C
Collector Current	IC	-	-	500	mA	Tc = 25掳C
Base Current	IB	-	-	50	mA	Tc = 25掳C
Power Dissipation	PT	-	-	625	mW	Tc = 25掳C
Operating Junction Temperature	TJ	-20	-	150	掳C	-
Storage Temperature Range	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the transistor to temperatures outside the specified operating range.
   • Handle with care to prevent damage from electrostatic discharge (ESD).

2. Mounting:

   • Ensure proper heat dissipation if the transistor is used in high-power applications.
   • Use appropriate mounting techniques to avoid mechanical stress on the leads.

3. Biasing:

   • Ensure that the base-emitter voltage (V_BE) and collector-emitter voltage (V_CE) do not exceed their maximum ratings.
   • Properly bias the transistor to operate within its safe operating area (SOA).

4. Storage:

   • Store in a dry, cool place away from direct sunlight and extreme temperatures.

5. Testing:

   • Use a multimeter or a dedicated transistor tester to verify the parameters before use.
   • Ensure that the test conditions match the typical operating conditions listed in the table.

6. Applications:

   • Suitable for general-purpose switching and amplification applications.
   • Can be used in circuits requiring moderate power handling and high voltage tolerance.

(For reference only)