Details

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BUY KGF20N60KDA https://www.utsource.net/itm/p/12606125.html

Parameter	Symbol	Min	Typical	Max	Unit	Description
Collector-Emitter Voltage	VCES	-		600	V	Maximum voltage between collector and emitter with the gate open
Gate-Emitter Voltage	VGE	-15		15	V	Maximum voltage between gate and emitter
Continuous Collector Current	IC	-	20	-	A	Maximum continuous current through the collector
Pulse Collector Current	ICM	-	40	-	A	Maximum pulse current through the collector (t = 10 渭s, I2t = 800 A2s)
Power Dissipation	PD	-		300	W	Maximum power dissipation at Tc = 25掳C
Junction Temperature	TJ	-55		175	掳C	Operating junction temperature range
Storage Temperature	TSTG	-55		150	掳C	Storage temperature range
Thermal Resistance	RthJC	-	0.75	-	掳C/W	Thermal resistance from junction to case
Turn-On Time	ton	-	0.13	-	渭s	Time from 10% to 90% of IC when VGE = 15V, IC = 20A, VCE = 50V
Turn-Off Time	toff	-	0.25	-	渭s	Time from 90% to 10% of IC when VGE = -15V, IC = 20A, VCE = 50V
Total Switching Time	ts	-	0.38	-	渭s	Sum of turn-on and turn-off times
Saturation Voltage	VCEsat	-	1.8	-	V	Collector-emitter saturation voltage at IC = 20A, VGE = 15V
Gate Charge	Qg	-	140	-	nC	Total gate charge at IC = 20A, VGE = 15V
Input Capacitance	Cies	-	2100	-	pF	Input capacitance at VCE = 50V, f = 1 MHz
Output Capacitance	Coes	-	120	-	pF	Output capacitance at VCE = 50V, f = 1 MHz
Reverse Transfer Capacitance	Cres	-	110	-	pF	Reverse transfer capacitance at VCE = 50V, f = 1 MHz

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the thermal resistance and keep the junction temperature within the specified range.
   • Handle the device with care to avoid mechanical stress and damage to the leads.

2. Electrical Connections:

   • Connect the gate to the control circuit ensuring that the gate-emitter voltage does not exceed the maximum ratings.
   • Ensure that the collector and emitter connections are secure to prevent any loose connections which can cause excessive heating.

3. Thermal Management:

   • Use a heatsink with sufficient thermal conductivity to maintain the junction temperature below 175掳C.
   • Consider forced air cooling or liquid cooling for high-power applications.

4. Operational Conditions:

   • Do not exceed the maximum collector-emitter voltage, gate-emitter voltage, or collector current.
   • Ensure that the power dissipation is within the rated limits by proper heat management.

5. Storage and Transportation:

   • Store the device in a dry, cool place within the storage temperature range.
   • Avoid exposure to extreme temperatures and humidity during transportation.

6. Testing and Measurement:

   • Use appropriate test equipment and procedures to measure parameters such as VCEsat, Qg, and switching times.
   • Follow safety guidelines when testing high-voltage and high-current devices.

7. Safety Precautions:

   • Always use appropriate personal protective equipment (PPE) when handling high-voltage components.
   • Ensure that the device is properly isolated from live circuits during installation and maintenance.

For detailed application notes and further information, refer to the datasheet provided by the manufacturer.

(For reference only)