Details
BUY 2SK2796 https://www.utsource.net/itm/p/12606135.html
| Parameter | Symbol | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 300 | - | V | |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | |
| Drain Current | ID | - | 15 | - | A | |
| Gate Threshold Voltage | VGS(th) | 2.0 | 4.0 | 6.0 | V | |
| Transconductance | gfs | 2.5 | - | - | S | |
| Input Capacitance | Ciss | - | 1500 | - | pF | |
| Output Capacitance | Coss | - | 200 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 100 | - | pF | |
| Power Dissipation | PD | - | - | 200 | W | |
| Junction Temperature | TJ | - | - | 150 | 掳C |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within safe limits.
- Use appropriate mounting hardware to secure the device.
Biasing:
- Apply gate-source voltage (VGS) carefully to avoid exceeding the maximum ratings.
- Ensure that the gate threshold voltage (VGS(th)) is met for proper operation.
Operation:
- Do not exceed the maximum drain current (ID) or drain-source voltage (VDS).
- Monitor power dissipation (PD) to prevent overheating.
Storage:
- Store in a dry, cool place to prevent damage from moisture.
- Handle with care to avoid static discharge which can damage the device.
Testing:
- Use appropriate test equipment and procedures to avoid damaging the device during testing.
- Refer to the datasheet for specific test conditions and procedures.
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